2
3
1
4
Gate 2
Gate 1
Source
Drain
NTE454
MOSFET, NCh, Dual Gate,
TV UHF/RF Amp, Gate Protected
Description:
The NTE454 is a depletion mode dual gate MOSFET transistor designed for VHF amplifier and mixer
applications.
Features:
D
Low Reverse Transfer Capacitance C
rss
= 0.03pf (Max)
D
High Forward Transfer Admittance |y
fe
|
= 020 mmhos
D
Diode Protected Gates
Absolute Maximum Ratings:
Drain Source Voltage, V
DSX
20Vdc
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DrainGate Voltage, V
DG1
30Vdc
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
DG2
30Vdc
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate Current, I
G1
10mAdc
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I
G2
10mAdc
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Drain CurrentContinuous, I
D
60mAdc
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
A
= +25
C), P
D
360mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate above 25
C
2.4mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
C
= +25
C), P
D
1.2Watt
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate above 25
C
8.0mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Channel Temperature Range, T
stg
65 to +200
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Junction Temperature Range, T
J
65 to +175
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature, 1/16" from Seated Surface for 10 Seconds, T
L
300
C
. . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
A
= 25
C unless otherwise noted)
Characteristics
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DrainSource Breakdown
Voltage
V
(BR)DSX
I
D
= 10
Adc, V
5
= 0,
V
GIS
= V
G25
= 5.0Vdc
20
Vdc
Gate 1= Source Breakdown
Voltage (Note 1)
V
(BR)G1SO
I
G1
=
10mAdc, V
GIS
= V
DS
= 0
6.0
12
30
Vdc
Gate 2Source Breakdown
Voltage (Note 1)
V
(BR)G2SO
I
G2
=
10mAdc, V
G15
= V
D5
= 0
5.0
12
30
Vdc
Gate 1 to Source Cutoff Voltage
V
GIS(off)
V
DS
= 15Vdc, V
G2S
= 4.0Vdc,
I
D
= 20
Adc
0.5
1.5
5.0
Vdc
Gate 2 to Source Cutoff Voltage
V
G2S(off)
V
DS
= 15Vdc, V
G15
= 0,
I
D
= 20
Adc
0.2
1.4
5.0
Vdc
Gate 1 Leakage Current
I
G1SS
V
GIS
=
5.0Vdc, V
G2S
= V
DS
= 0
0.04
10
nAdc
V
G2S
= 5.0Vdc, V
G2S
= V
DS
= 0,
T
A
= 150
C
10
Adc
Gate 2 Leakage Current
I
G2SS
V
G2S
=
5.0Vdc, V
GIS
= V
DS
= 0
0.05
10
nAdc
V
G2S
= 5.0Vdc, V
GIS
= V
DS
= 0,
T
A
= 150
C
10
Adc
ON CHARACTERISTICS
ZeroGate Voltage Drain
Current (Note 2)
I
DSS
V
DS
= 15Vdc, V
GIS
= 0,
V
G25
= 4.0Vdc
6.0
13
30
mAdc
SMALLSIGNAL CHARACTERISTICS
Forward Transfer Admittance
(Note 3)
|y
fe
|
V
DS
= 15Vdc, V
G2S
= 4.0Vdc,
V
GIS
= 0, f = 1.0kH
Z
8.0
12.8
20
mmhos
Input Capacitance
C
iss
V
DS
= 15Vdc, V
G2S
= 4.0Vdc,
I
D
= I
DSS
, f = 1.0MH
Z
3.3
pF
Output Capacitance
C
oss
V
DS
= 15Vdc, V
G2S
= 4.0Vdc,
I
D
= I
DSS
, f = 1.0MH
Z
1.7
pF
Reverse Transfer Capacitance
C
rss
V
DS
= 15Vdc, V
G2S
= 4.0Vdc,
I
D
= 10mAdc, f = 1.0MH
Z
0.005
0.014
0.03
pF
FUNCTIONAL CHARACTERISTICS
Noise Figure
NF
V
DD
= 18Vdc, V
GG
= 7.0Vdc,
f = 200MH
Z
1.8
4.5
dB
Common Source Power Gain
G
ps
V
DD
= 18Vdc, V
GG
= 7.0Vdc,
f = 200MH
Z
15
20
25
dB
Bandwidth
BW
V
DD
= 18Vdc, V
GG
= 7.0Vdc,
f = 200MH
Z
5.0
9.0
MH
Z
Gain Control Gate Supply
Voltage (Note 4)
V
GG(GC)
V
DD
= 18Vdc,
G
ps
= 30dB,
f = 200MH
Z
0
1.0
3.0
Vdc
Note 1. All gate breakdown voltages are measured while the device is conducting rated gate current. This ensures
that the gatevoltage limiting network is functioning properly.
Note 2. Pulse Test: Pulse Width = 300
s, Duty Cycle
2.0%
Note 3. This parameter must be measured with bias voltages supplied for less than 6 seconds to avoid overheating.
Note 4.
G
ps
is defined as the change in G
pe
from the values at V
GG
= 7.0V power gain conversion
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