NTE459
NChannel Silicon JFET Transistor
AF Amplifier/Chopper/Switch
Absolute Maximum Ratings: (T
A
= +25
C unless otherwise specified)
DrainSource Voltage, V
DS
50V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DrainGate Voltage, V
DG
50V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GateSource Voltage, V
GS
50V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Drain Current, I
D
10mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
A
= +25
C), P
D
300mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
C
2mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
+175
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +200
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
GateSource Breakdown Voltage
V
(BR)GSS
I
G
= 1
A, V
DS
= 0
50
V
Gate Reverse Current
I
GSS
V
GS
= 30V, V
DS
= 0
0.1
nA
V
GS
= 30V, V
DS
= 0, T
A
= +150
C
100
nA
GateSource Cutoff Voltage
V
GS(off)
I
D
= 0.5nA, V
DS
= 15V
6
V
GateSource Voltage
V
GS
I
D
= 200
A, V
DS
= 15V
1
4
V
ON Characteristics
ZeroGateVoltage Drain Current
I
DSS
V
DS
= 15V, V
GS
= 0, Note 1
2
10
mA
SmallSignal Characteristics
Forward Transfer Admittance
|y
fs
|
V
DS
= 15V, V
GS
= 0, f = 1kHz,
Note 1
3000
6500
mho
V
DS
= 15V, V
GS
= 0, f = 100MHz
3000
mho
Output Admittance
|y
os
|
V
DS
= 15V, V
GS
= 0, f = 1kHz,
Note 1
20
mho
Input Capacitance
C
iss
V
DS
= 15V, V
GS
= 0, f = 1MHz
6
pF
Reverse Transfer Capacitance
C
rss
V
DS
= 15V, V
GS
= 0, f = 1MHz
3
pF
Note 1. Pulse Test: Pulse Width
100ms, Duty Cycle
10%.
Electrical Characteristics (Cont'd): (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Functional Characteristics
Noise Figure
NF
V
DS
= 15V, V
GS
= 0, R
G
= 1M
,
f = 10Hz, BW = 5Hz
5
dB
Equivalent ShortCircuit Input Noise
Voltage
e
n
V
DS
= 15V, V
GS
= 0, f = 10Hz,
BW = 5Hz
200
nV/Hz
1/2
.220 (5.58) Dia
.185 (4.7) Dia
.030 (.762)
.040 (1.02)
.018 (0.45) Dia
45
Source
Drain
Gate
Case
.190
(4.82)
.500
(12.7)
Min
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