NTE46
Silicon NPN Transistor
Darlington, General Purpose Amplifier,
Preamp, Driver
Absolute Maximum Ratings:
CollectorEmitter Voltage, V
CES
100V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorBase Voltage, V
CBO
100V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EBO
12V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Collector Current, I
C
500mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
A
= +25
C), P
D
625mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
C
5mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
C
= +25
C), P
D
1.5W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
C
12mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction to Case, R
JC
83.3
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction to Ambient, R
JA
200
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
CollectorEmitter Breakdown
Voltage
V
(BR)CES
I
C
= 100
A, V
BE
= 0
100
V
CollectorBase Breakdown Voltage
V
(BR)CBO
I
C
= 100
A, I
E
= 0
100
V
EmitterBase Breakdown Voltage
V
(BR)EBO
I
E
= 10
A, I
C
= 0
12
V
Collector Cutoff Voltage
I
CBO
V
CB
= 80V, I
E
= 0
100
nA
I
CES
V
CE
= 80V, V
BE
= 0
500
nA
Emitter Cutoff Current
I
EBO
V
BE
= 10V, I
C
= 0
100
nA
Electrical Characteristics (Cont'd): (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
ON Characteristics (Note 1)
DC Current Gain
h
FE
I
C
= 10mA, V
CE
= 5V
10,000
I
C
= 100mA, V
CE
= 5V
10,000
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 10mA, I
B
= 0.01mA
0.7
1.2
V
I
C
= 100mA, I
B
= 0.1mA
0.8
1.5
V
BaseEmitter ON Voltage
V
BE(on)
I
C
= 100mA, V
CE
= 5V
1.4
2.0
V
SmallSignal Characteristics
Current GainBandwidth Product
f
T
I
C
= 10mA, V
CE
= 5V,
f = 100MHz, Note 2
125
200
MHz
Output Capacitance
C
obo
V
CB
= 10V, I
E
= 0, f = 100kHz
5.0
8.0
pF
Note 1. Pulse Test: Pulse Width
300
s, Duty Cycle
2%
Note 2. f
T
= h
fe
f
test
B
C
E
.021 (.445) Dia Max
E B C
Seating Plane
.135 (3.45) Min
.100 (2.54)
.050 (1.27)
.105 (2.67) Max
.105 (2.67) Max
.205 (5.2) Max
.210
(5.33)
Max
.500
(12.7)
Min
.165
(4.2)
Max
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