NTE464 (PCh) & NTE465 (NCh)
Silicon Complementary MOSFET Transistors
Enhancement Mode for Switching Applications
Absolute Maximum Ratings:
DrainSource Voltage, V
DS
25V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DrainGate Voltage, V
DG
30V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GateSource Voltage, V
GS
30V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate Current, I
G
30mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
A
= +25
C), P
D
300mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
C
1.7mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
C
= +25
C), P
D
800mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
C
4.56mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
+175
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +175
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
DrainSource Breakdown Voltage
V
(BR)DSX
I
D
= 10
A, V
GS
= 0
25
V
ZeroGateVoltage Drain Current
I
DSS
V
DS
= 10V, V
GS
= 0, T
A
= +25
C
10
nA
V
DS
= 10V, V
GS
= 0, T
A
= +150
C
10
A
Gate Reverse Current
I
GSS
V
GS
=
30V, V
DS
= 0
10
pA
ON Characteristics
Gate Threshold Voltage
V
GS(Th)
V
DS
= 10V, I
D
= 10
A
1
5
V
DrainSource OnVoltage
V
DS(on)
I
D
= 2mA, V
GS
= 10V
1
V
OnState Drain Current
I
D(on)
V
GS
= 10V, V
DS
= 10V
3
mA
Electrical Characteristics (Cont'd): (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
SmallSignal Characteristics
DrainSource Resistance
NTE464
r
ds(on)
V
GS
= 10V, I
D
= 0, f = 1kHz
600
NTE465
300
Forward Transfer Admittance
|y
fs
|
V
DS
= 10V, I
D
= 2mA, f = 1kHz
1000
mhos
Input Capacitance
C
iss
V
DS
=
10V, V
GS
= 0, f = 140kHz
5
pF
Reverse Transfer Capacitance
C
rss
V
DS
= 0, V
GS
= 0, f = 140kHz
1.3
pF
DrainSubstrate Capacitance
NTE464
C
d(sub)
V
D(SUB)
= 10V, f = 140kHz
4
pF
NTE465
5
pF
Switching Characteristics
TurnOn Delay
t
d1
I
D
= 2mA, V
DS
= 10V, V
GS
= 10V
45
ns
Rise Time
t
r
65
ns
TurnOff Delay
t
d2
60
ns
Fall Time
t
f
100
ns
.220 (5.58) Dia
.185 (4.7) Dia
.030 (.762)
.040 (1.02)
.018 (0.45) Dia
45
Source
Gate
Drain
Case
.190
(4.82)
.500
(12.7)
Min
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