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Электронный компонент: NTE469

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NTE56065
TRIAC, 600V
RM
, 12A,
High Commutation
Description:
The NTE56065 is a glass passivated, high commutation TRIAC in an isolated fullpack type package
designed for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This device
will commutate the full rated RMS current at the maximum rated junction temperature, without the aid
of a snubber.
Absolute Maximum Ratings:
Repetitive Peak OffSate Voltage (Note 1), V
DRM
600V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RMS OnState Current (Full Sine Wave, T
HS
56
C), I
T
(RMS)
12A
. . . . . . . . . . . . . . . . . . . . . . . . . .
NonRepetitive Peak OnState Current, I
TSM
(Full Sine Wave, T
J
= +25
C prior to Surge)
t = 20ms
95A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
t = 16.7ms
105A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I
2
t for Fusing (t = 10ms), I
2
t
45A
2
sec
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Repetitive RateofRise of OnState Current after Triggering, dI
T
/dt
(I
TM
= 20A, I
G
= 0.2A, dI
G
/dt = 0.2A/
s)
100A/
s
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Gate Current, I
GM
2A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Gate Voltage, V
GM
5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Gate Power, P
GM
5W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Average Gate Power (Over Any 20ms Period), P
G(AV)
500mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
+125
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
40
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoHeatsink (Full or Half Cycle), R
thJHS
With Heatsink Compound
4.0K/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Without Heatsink Compound
5.5K/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Typical Thermal Resistance, JunctiontoAmbient, R
thJA
55K/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Although not recommended, offstate voltages up to 800V may be applied without damage,
but the TRIAC may switch to the onstate. The rateofrise of current should not exceed
15A/
s.
Electrical Characteristics: (T
J
= +25
C unless otherwise specfied)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static Characteristics
Gate Trigger Current
MT
2
(+), G (+)
I
GT
V
D
= 12V, I
T
= 0.1A, Note 2
2
18
50
mA
MT
2
(+), G ()
2
21
50
mA
MT
2
(), G ()
2
34
50
mA
Latching Current
MT
2
(+), G (+)
I
L
V
D
= 12V, I
T
= 0.1A
31
60
mA
MT
2
(+), G ()
34
90
mA
MT
2
(), G ()
30
60
mA
Holding Current
I
H
V
D
= 12V, I
T
= 0.1A
31
60
mA
OnState Voltage
V
T
I
T
= 17A
1.3
1.6
V
Gate Trigger Voltage
V
GT
V
D
= 12V, I
T
= 0.1A
0.7
1.5
V
V
D
= 400V, I
T
= 0.1A, T
J
= +125
C
0.25
0.4
V
OffState Leakage Current
I
D
V
D
= 600V, T
J
= +125
C
0.1
0.5
mA
Dynamic Characteristics
Critical RateofRise of
OffState Voltage
dV
D
/dt
V
DM
= 402V, T
J
= +125
C,
Exponential Waveform, Gate Open
1000
4000
V/
s
Critical RateofChange of
Commutating Current
dI
com
/dt
V
DM
= 400V, T
J
= +125
C, I
T
RMS = 12A,
without Snubber, Gate Open
24
A/ms
Gate Controlled TurnOn Time
t
gt
I
TM
= 12A, V
D
= V
DRM
max, I
G
= 0.1A,
dI
G
/dt = 5A/
s
2
s
Isolation Characteristics
RMS Isolation Voltage from All
3 Pins to External Heatsink
V
ISOL
f = 50 60Hz, Sinusoidal Waveform,
R.H.
65%, Clean and Dustfree
2500
V
Capacitance from T2 to
External Heatsink
C
ISOL
f = 1MHz
10
pF
Note 2. Device does not trigger in the MT
2
(), G (+) quadrant.
.126 (3.2) Dia Max
.181 (4.6) Max
.405 (10.3)
Max
.114 (2.9)
.622
(15.0)
Max
.252
(6.4)
.118
(3.0)
Max
MT
1
MT
2
G
Isol
.100 (2.54)
.098 (2.5)
.531
(13.5)
Min