NTE476
Silicon NPN Transistor
RF Power Output
Description:
The NTE476 is a silicon epitaxial NPNplanar transistor which employs a multiemitter electrode de-
sign. This feature together with a heavily diffused base matrix located between the individual emitters
result in high RF current handling capability, high power gain, low base resistance and low output ca-
pacitance. This device is intended for use as a Class A, B or C amplifier and in oscillator and frequency
multiplier circuits.
Features:
D
Designed for VHF mobile and marine transmitters
D
High efficiency at maximum stability
D
Improved metallization to achieve extreme ruggedness
Absolute Maximum Ratings: (T
A
= +25
C except where specified)
CollectorBase Voltage, V
CBO
36V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorEmitter Voltage, V
CEO
18V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EBO
4V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Collector Current, I
C
max
3A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Dissipation at 25
C Stud, P
D
23.2W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoStud, R
thJC
7.54
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Junction Temperature Range, T
J
65
to 200
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
65
to 200
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
CollectorEmitter Breakdown Voltage
V
(BR)CEO
I
C
= 200mA, I
B
= 0, Note 1
18
V
CollectorBase Breakdown Voltage
V
(BR)CBO
I
C
= 500
A, I
E
= 0
36
V
EmitterBase Breakdown Voltage
V
(BR)EBO
I
E
= 2mA, I
C
= 0
4
V
Collector Cutoff Current
I
CBO
V
CB
= 15V, I
E
= 0
0.25
mA
Dynamic Characteristics
Current Gain Bandwidth Product
f
T
I
C
= 100mA, V
CE
= 13.6V
350
MHz
Output Capacitance
C
ob
V
CB
= 13.6V, I
E
= 0, f = 100kHz
45
pF
Functional Tests
Power Output
P
OUT
V
CE
= 13.6V, f = 175MHz
12
W
Power Gain (Class C)
P
g
4.77
dB
Collector Efficiency (Class C)
80
%
Note 1. Pulsed thru a 25mH inductor.
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