NTE488
Silicon NPN Transistor
RF Power Output
Description:
The NTE488 is a silicon NPN epitaxial planar type transistor designed for industrial use RF power
Amplifiers on VHF band mobile radio applications.
Features:
D
High Power Gain: G
pe
10.7dB @ V
CC
= 13.5V, P
O
= 3.5W, f = 175MHz
D
TO39 Metal Sealed Package for High Reliability
D
Emitter Electrode is Connected Electrically to the Case
Application:
1 to 3 Watt Power Amplifiers in VHF Band Mobile Radio Applications.
Absolute Maximum Ratings: (T
C
= +25
C unless otherwise specified)
CollectorBase Voltage, V
CBO
35V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EBO
4V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
1A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Dissipation, P
C
T
A
= +25
C
1W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
C
= +25
C
10W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Junction Temperature, T
j
+175
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
65
to +175
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoAmbient, R
thJA
150
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoCase, R
thJC
15
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
C
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
EmitterBase Breakdown Voltage
V
(BR)EBO
4
V
CollectorBase Breakdown Voltage
V
(BR)CBO
I
C
= 10mA, I
E
= 0
35
V
CollectorEmitter Breakdown Voltage
V
(BR)CEO
I
C
= 50A, R
BE
=
17
V
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