NTE51
Silicon NPN Transistor
High Voltage, High Speed Switch
Description:
The NTE51 is a silicon NPN transistor in a TO220 type package designed for highvoltage, high
speed power switching inductive circuits where fall time is critical. This device is particularly suited
for 115V and 220V SWITCHMODE applications such as switching regulators, Inverters, motor con-
trols, solenoid/relay drivers and deflection circuits.
Features:
D
Reverse Bias SOA with Inductive Loads @ T
C
= +100
C
D
700V Blocking Capability
Absolute Maximum Ratings:
CollectorEmitter Voltage, V
CEO(sus)
400V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorEmitter Voltage, V
CEV
700V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter Base Voltage, V
EBO
9V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current,I
C
Continuous
4A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (Note 1)
8A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
B
Continuous
2A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (Note 1)
4A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter Current, I
E
Continuous
6A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (Note 1)
12A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
A
= +25
C), P
D
2W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate above 25
C
16mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
C
= +25
C), P
D
75W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate above 25
C
600mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
65
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
65
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoCase, R
thJC
1.67
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoAmbient, R
thJA
62.5
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (During Soldering, 1/8" from case, 5sec), T
L
+275
C
. . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
C
= +25
C unless otherwise Specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics (Note 1)
CollectorEmitter Sustaining Voltage
V
CEO(sus)
I
c
= 10mA, I
B
= 0
400
V
Collector Cutoff Current
I
CEV
V
CEV
= 700V, V
BE(off)
= 1.5V
1
mA
V
CEV
= 700V, V
BE(off)
= 1.5V,
T
C
= +100
C
1
mA
Emitter Cutoff Current
I
EBO
V
EB
= 9V, I
c
= 0
1
mA
Note 1. Pulse test: Pulse Width = 300
s, Duty Cycle = 2%.
Electrical Characteristics (Cont'd): (T
C
= +25
C unless otherwise Specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
ON Characteristics (Note 1)
DC Current Gain
h
FE
V
CE
= 5V, I
C
= 1A
10
60
V
CE
= 5V, I
C
= 2A
8
40
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 1A, I
B
= 0.2A
0.5
V
I
C
= 2A, I
B
= 0.5A
0.6
V
I
C
= 2A, I
B
= 0.5A, T
C
= +100
C
1.0
V
I
C
= 4A, I
B
= 1A
1.0
V
Dynamics Characteristics
Current GainBandwidth Product
f
T
V
CE
= 10V, I
C
= 500mA, f = 1MHz
4
MHz
Output Capacitance
C
ob
V
CB
= 10V, I
E
= 0, f = 0.1MHz
65
pF
Switching Characteristics (Resistive Load)
Delay Time
t
d
V
CC
= 125V, I
C
= 2A, I
B1
= I
B2
= 0.4A,
0.025
0.1
s
Rise Time
t
r
t
p
= 25
s, Duty Cycle
1%
0.3
0.7
s
Storage Time
t
s
1.7
4.0
s
Fall Time
t
f
0.4
0.9
s
Switching Characteristics (Inductive Load, Clamped)
Voltage Storage Time
t
sv
V
clamp
= 300V, I
B1
= 0.4A,
0.9
4.0
s
Crossover Time
t
c
V
BE(off)
= 5V
0.32
0.9
s
Fall Time
t
fi
0.16
s
Note 1. Pulse test: Pulse Width = 300
s, Duty Cycle = 2%.
.420 (10.67)
Max
.500
(12.7)
Max
.500
(12.7)
Min
.250 (6.35)
Max
.147 (3.75)
Dia Max
.070 (1.78) Max
.100 (2.54)
Base
Collector/Tab
Emitter
.110 (2.79)
PDF 
ZIP