NTE5351
Silicon Controlled Rectifier (SCR)
for High Speed Switching
Features:
D
Fast TurnOff Time
D
High di/dt and dv/dt Capabilities
D
ShortedEmitter GateCathode Construction
D
Center Gate Construction
NonRepetitive Peak Reverse Voltage (Gate Open, Note 1), V
RSOM
700V
. . . . . . . . . . . . . . . . . . . . .
NonRepetitive Peak OffState Voltage (Gate Open, Note 1), V
DSOM
700V
. . . . . . . . . . . . . . . . . . . .
Repetitive Peak Reverse Voltage (Gate Open, Note 1), V
RROM
600V
. . . . . . . . . . . . . . . . . . . . . . . . . .
Repetitive Peak OffState Voltage (Gate Open, Note 1), V
DROM
600V
. . . . . . . . . . . . . . . . . . . . . . . . .
RMS OnState Current (T
C
= +60
C, 180
conduction angle), I
T(RMS)
5.0A
. . . . . . . . . . . . . . . . . . . .
Average OnState Current (T
C
= +60
C, 180
conduction angle), I
T(AV)
3.2A
. . . . . . . . . . . . . . . . . .
Peak Surge (NonRepetitive) OnState Current, I
TSM
(T
C
= +60
C, for one full cycle at applied voltage)
60Hz (Sinusoidal)
80A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
50Hz (Sinusoidal)
65A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Rate of Change of OnState Current (V
D
= 600V, I
GT
= 50mA, t = 1 to 8.3ms), di/dt
200A/
s
. . . . .
Fusing Current (T
J
= 40
to +100
C, t = 1 to 8.3ms), I
2
t
25A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Forward Gate Power Dissipation (10
s Max, Note 2), P
GM
3W
. . . . . . . . . . . . . . . . . . . . . . . . .
Peak Reverse Gate Power Dissipation (10
s Max, Note 2), P
RGM
3W
. . . . . . . . . . . . . . . . . . . . . . . .
Average Gate Power Dissipation (10
s Max, Note 2), P
G(AV)
0.5W
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Case Temperature Range, T
C
40
to +100
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
40
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoCase, R
thJC
8
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoAmbient, R
thJA
40
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (During Soldering, 1/32" from seating plane, 10sec max), T
L
+225
C
. . . . . . . . .
Note 1. These values do not apply if there is a positive gate signal. Gate must be negatively biased.
Note 2. Any product of gate current and gate voltage which results in a gate power less than the maximum
is permitted.
Electrical Characteristics: (At "Maximum Ratings" and T
C
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Peak OffState Forward Current
I
DOM
V
D
= 600V, T
C
= +100
C, Gate Open
0.5
3.0
mA
Peak OffState Reverse Current
I
ROM
V
D
= 600V, T
C
= +100
C, Gate Open
0.3
1.5
mA
Instantaneous OnState Voltage
v
T
i
T
= 30A Peak
2.2
3.0
V
Instantaneous Holding Current
i
HO
Gate Open
20
50
mA
Critical Rate of Rise of OffState
Current
dv/dt
V
D
= 600V, exponential voltage rise,
T
C
= +80
C, Gate Open
100
250
V/
s
DC Gate Trigger Current
I
GT
V
D
= 12V, R
L
= 30
15
40
mA
DC Gate Trigger Voltage
V
GT
V
D
= 12V, R
L
= 30
1.8
3.5
V
Gate Controlled TurnOn Time
t
gt
V
DX
= 600V, I
GT
= 300mA, t
r
= 0.1
s,
I
T
= 2A peak
0.7
s
Circuit Commutated TurnOff
Time
t
q
V
CX
= 600V, i
T
= 2A, pulse duration = 50
s,
dv/dt = 100V/
s, di/dt = 10A/
s,
I
GT
= 100mA, V
GT
= 0V (at turnoff),
T
C
= +80
C
4
6
s
.485 (12.3)
Dia
.062 (1.57)
.295 (7.5)
.360
(9.14)
Min
.031 (0.78) Dia
.960 (24.3)
Gate
.580 (14.7)
.200
(5.08)
Cathode
Anode/Case
.145 (3.7) R Max
.147 (3.75) Dia
(2 Places)
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