NTE5411 thru NTE5416
Silicon Controlled Rectifier (SCR)
4 Amp, Sensitive Gate
Description:
The NTE5411 through NTE5416 are PNPN silicon controlled rectifier (SCR) devices designed for
high volume consumer applications such as temperature, light, and speed control: process and re-
mote control, and warning systems where reliability of operation is important.
Features:
D
Passivated Surface for Reliability and Uniformity
D
Power Rated at Economical Prices
D
Practical Level Triggering and Holding Characteristics
Absolute Maximum Ratings: (T
C
= +110
C unles otherwise specified)
Repetitive Peak Forward and Reverse Blocking Voltage, V
DRM
, V
RRM
(1/2 Sine Wave, R
GK
= 1000
, T
C
= 40
to +110
C, Note 1)
NTE5411
30V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5412
60V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5413
100V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5414
200V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5415
400V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5416
600V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NonRepetitive Peak Reverse Blocking Voltage , V
RSM
(1/2 Sine Wave, R
GK
= 1000
, T
C
= 40
to +110
C)
NTE5411
100V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5412
100V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5413
150V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5414
250V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5415
450V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5416
650V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Average OnState Current, I
T(AV)
T
C
= 40
to +110
C
2.6A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
C
= +100
C
1.6A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Surge OnState Current (T
C
= +90
C), I
TSM
1/2 Sine wave, 60Hz
25A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1/2 Sine wave, 1.5ms
35A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Circuit Fusing (t = 8.3ms), I
2
t
2.6A
2
s
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Gate Power (Pulse Width = 10
s, T
C
= +90
C), P
GM
0.5W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Ratings apply for zero or negative gate voltage. Devices shall not have a positive bias ap-
plied to the gate concurrently with a negative potential on the anode. Devices should not
be tested with a constant current source for forward or reverse blocking capability such that
the voltage applied exceeds the rated blocking voltage.
Absolute Maximum Ratings (Cont'd): (T
C
= +110
C unles otherwise specified)
Average Gate Power (t = 8.2ms, T
C
= +90
C), P
G(AV)
0.1W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Forward Gate Current, I
GM
0.2A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Reverse Gate Voltage, V
RGM
6V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
40
to +110
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
40
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoCase, R
thJC
3
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoAmbient, R
thJA
75
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Mounting Torque (Note 2)
6 in. lb.
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 2. Torque rating applies with the use of a compression washer. Mounting torque in excess of
6 in. lb. does not appreciably lower casetosink thermal resistance. Anode lead and heat-
sink contact pad are common.
Electrical Characteristics: (T
C
= +25
C, R
GK
= 1000
unles otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Peak Forward or Reverse
I
DRM
,
Rated V
DRM
or V
RRM
, T
C
= +25
C
10
A
Blocking Current
I
RRM
Rated V
DRM
or V
RRM
, T
C
= +110
C
200
A
Peak Forward "ON" Voltage
V
TM
I
TM
= 8.2A Peak, Note 3
2.2
V
Gate Trigger Current
I
GT
V
AK
= 12V, R
L
= 24
200
A
(Continuous DC, Note 4)
V
AK
= 12V, R
L
= 24
,
T
C
= 40
C
500
A
Gate Trigger Voltage
(Continuous DC)
V
GT
Source Voltage = 12V, R
S
= 50
,
V
AK
= 12V, R
L
= 24
,
T
C
= 40
C
1
V
Gate NonTrigger Voltage
V
GD
V
AK
= Rated V
DRM
, R
L
= 100
,
T
C
= +110
C
0.2
V
Holding Current
I
H
V
AK
= 12V, I
GT
= 2mA, T
C
= +25
C
5
mA
Initiating OnState Current = 200mA,
T
C
= 40
C
10
mA
Total TurnOn Time
t
gt
Source Voltage = 12V, R
S
= 6k
,
I
TM
= 8.2A, I
GT
= 2mA, Rated V
DRM
,
Rise Time = 20ns, Pulse Width = 10
s
2
s
Forward Voltage Application Rate
dv/dt
V
D
= Rated V
DRM
, T
C
= +110
C
10
V/
s
Note 3. Pulse Width = 1ms to 2ms, Duty Cycle = 2%.
Note 4. Measurement does not include R
GK
current.
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