NTE5424
Silicon Controlled Rectifier (SCR)
for TV Power Supply Switching
Description:
The NTE5424 is a silicon controlled rectifier (SCR) in a TO220 type package designed for highspeed
switching applications such as power inverters, switching regulators, and highcurrent pulse applica-
tions. This device features fast turnoff, high dv/dt, and high di/dt characteristics and may be used
at frequencies up to 25kHz.
Features:
D
Fast TurnOff Time
D
High di/dt and dv/dt Capabilities
D
ShortedEmitter GateCathode Construction
D
Low Thermal Resistance
D
CenterGate Construction
Absolute Maximum Ratings:
Repetitive Peak OffState Voltage (Gate Open, Note 1), V
DRM
400V
. . . . . . . . . . . . . . . . . . . . . . . . . .
Repetitive Peak Reverse Voltage (Gate Open, Note 1), V
RRM
400V
. . . . . . . . . . . . . . . . . . . . . . . . . . .
RMS OnState Current (T
C
= +60
C, t
1
/t
2
= 0.5), I
T(RMS)
5.0A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Average OnState Current (T
C
= +60
C, t
1
/t
2
= 0.5), I
T(AV)
3.2A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Surge (NonRepetitive) OnState Current (One Cycle), I
TSM
60Hz Sinusoidal
80A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
50Hz Sinusoidal
75A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Forward Gate Power Dissipation (10
s max, Note 2), P
GM
13W
. . . . . . . . . . . . . . . . . . . . . . . .
Peak Reverse Gate Power Dissipation (10
s max, Note 2), P
RGM
13W
. . . . . . . . . . . . . . . . . . . . . . .
Average Gate Power Dissipation (10ms max, Note 2), P
G(AV)
500mW
. . . . . . . . . . . . . . . . . . . . . . . . .
Rate of Change of OnState Current V
DM
= 400V, I
GT
= 500mA, t
r
= 0.5
s), di/dt
200A/
s
. . . . . . .
Fusing Current (T
C
= +60
C, 8.3ms), I
2
t
26A
2
s
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Case Temperature Range, T
C
40
to +100
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
40
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (During Soldering, 10sec max), T
L
+225
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoCase, R
thJC
2.2
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. These values do not apply if there is a positive gate signal. Gate must be open or negatively
biased.
Note 2. Any product of gate current and gate voltage which results in a gate power less than the max-
imum is permitted.
Electrical Characteristics: (T
C
= +25
C, "Maximum Ratings" unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Peak Forward Blocking Current
I
DRM
V
D
= 400V, T
C
= +100
C
0.5
3.0
mA
Peak Reverse Blocking Current
I
RRM
V
R
= 400V, T
C
= +100
C
0.3
1.5
mA
Forward ON Voltage
V
TM
I
TM
= 30A
2.34
4.0
V
Gate Trigger Current, Continuous DC
I
GT
Anode Voltage = 12V, R
L
= 30
50
mA
Gate Trigger Voltage, Continuous DC
V
GT
Anode Voltage = 12V, R
L
= 30
1.2
2.5
V
DC Holding Current
I
H
20
50
mA
Rate of Rise of OffState Voltage
dv/dt
V
D
= 400V, T
C
= +80
C
100
250
V/
s
TurnOn Time
t
gt
V
D
= 400V, I
T
= 8A (Peak),
I
GT
= 300mA, t
r
= 0.1
s
0.7
s
Circuit Commutated TurnOff Time
t
q
V
D
= 400V, Pulse Duration = 50
s,
dv/dt = 100V/
s, di/dt = 10A/
s,
I
GT
= 100mA at turnon, I
T
= 4A,
V
GK
= 0V at turnoff, T
C
= +75
C
4.4
s
.250 (6.35)
Max
.500
(12.7)
Max
.500
(12.7)
Min
.110 (2.79)
.420 (10.67)
Max
.070 (1.78) Max
Cathode
.100 (2.54)
Anode/Tab
Gate
.147 (3.75)
Dia Max
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