NTE5426
Silicon Controlled Rectifier (SCR)
Sensitive Gate
Description:
The NTE5426 is silicon controlled rectifier (SCR) in an isolated tab TO220 type package. This device
may be switched from offstate to conduction by a current pulse applied to the gate terminal and is
designed for control applications in lighting, heating, cooling, and static switching relays.
Absolute Maximum Ratings:
Repetitive Peak OffState Voltage (Gate Open, T
C
= +110
C), V
DRM
400V
. . . . . . . . . . . . . . . . . . . . .
Repetitive Peak Reverse Voltage (Gate Open, T
C
= +110
C), V
RRM
400V
. . . . . . . . . . . . . . . . . . . . . .
RMS OnState Current (T
C
= +80
C, 180
Conduction Angle), I
T(RMS)
10A
. . . . . . . . . . . . . . . . . . . .
Peak Surge (NonRepetitive) OnState Current (One Cycle, 50 or 60Hz), I
TSM
80A
. . . . . . . . . . . .
Peak GateTrigger Current (3
s max), I
GTM
1A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak GatePower Dissipation (I
GT
= I
GTM
), P
GM
16W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Average Gate Power Dissipation, P
G(AV)
500mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Temperature Range, T
opr
40
to +100
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
40
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Typical Thermal Resistance, JunctiontoCase, R
thJC
3.0
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
C
= +25
C and "Maximum Ratings" unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Peak OffState Current
I
DRM
,
I
RRM
Rated V
DRM
or V
RRM
, T
C
= +110
C,
RG K = 1k
0.1
mA
Maximum OnState Voltage
V
TM
I
T
= Rated Amps
2.0
V
Gate Trigger Current, Continuous DC
I
GT
Anode Voltage = 12V, R
L
= 60
200
A
Gate Trigger Voltage, Continuous DC
V
GT
Anode Voltage = 12V, R
L
= 60
0.8
V
DC Holding Current
I
H
Gate Open, RG K = 1k
3.0
mA
TurnOn Time
t
gt
(t
d
+ t
r
) I
GT
= 150mA
2.5
s
Critical Rate of Rise of OffState
Voltage
critical
dv/dt
Gate Open, T
C
= +110
C,
RG K = 1k
8
V/
s
PDF 
ZIP