NTE2590
Silicon NPN Transistor
High Voltage Amp/Switch
Features:
D
High Breakdown Voltage, High Reliability
D
Low Output Capacitance
D
Wide ASO Range
Absolute Maximum Ratings: (T
A
= +25
C unless otherwise specified)
CollectorBase Voltage, V
CBO
1700V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorEmitter Voltage, V
CEO
900V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EBO
5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
50mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
150mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation, P
C
1.2W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
+150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
I
CBO
V
CB
= 900V, I
E
= 0
1.0
A
Emitter Cutoff Current
I
EBO
V
EB
= 4V, I
C
= 0
1.0
A
DC Current Gain
h
FE
V
CE
= 5V, I
C
=2mA
20
50
120
GainBandwidth Product
f
T
V
CE
= 10V, I
C
= 2mA
6
MHz
Output Capacitance
C
ob
V
CB
= 100V, f = 1MHz
2.0
pF
Collector Emitter Saturation Voltage
V
CE(sat)
I
C
= 5mA, I
B
= 1mA
5
V
Base Emitter Saturation Voltage
V
BE(sat)
I
C
=5A, I
B
= 1mA
2
V
Collector Base Breakdown Voltage
V
(BR)CBO
I
C
= 1mA, I
E
= 0
1700
V
Collector Emitter Breakdown Voltage
V
(BR)CEO
I
C
= 1mA, R
BE
=
900
V
Emitter Base Breakdown Voltage
V
(BR)EBO
I
E
= 1mA, I
C
= 0
5
V
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