NTE5511 thru NTE5513
Silicon Controlled Rectifier (SCR)
5 Amp
Description:
The NTE5511 thru NTE5513 alldiffused, three junction, silicon controlled rectifiers (SCR's) are in-
tended for use in powercontrol and powerswitching applications. These devices are available in
a TO66 type package and have a blocking voltage capability of up to 600V and a forward current rating
of 5A (rms value) at a case temperature of +75
C.
Features:
D
Designed Especially for HighVolume Systems
D
Readily Adaptable for PC Boards and Metal
Heat Sinks
D
Low Switching Losses
D
High di/dt and dv/dt Capabilities
D
Shorted Emitter GateCathode Construction
D
Forward and Reverse Gate Dissipation Ratings
D
AllDiffused Construction Assures Exceptional
Uniformity and Stability of Characteristics
D
DirectSoldered Internal Construction Assures
Exceptional Resistance to Fatigue
D
Symmetrical GateCathode Construction Pro-
vides Uniform Current Density, Rapid Electrical
Conduction, and Efficient Heat Dissipation
D
AllWelded Construction and Hermetic Sealing
D
Low Leakage Currents, Forward and Reverse
D
Low Forward Voltage Drop at High Current
Levels
D
Low Thermal Resistance
Absolute Maximum Ratings:
(For Operation with Sinusoidal AC Supply Voltage at a Frequency
between 50Hz and 400Hz, and with Resistive or Inductive Load)
Transient Peak Reverse Voltage (NonRepetitive), V
RM
(nonrep)
NTE5511
330V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5512
660V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5513
700V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Reverse Voltage (Repetitive), V
RM
(rep)
NTE5511
200V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5512
400V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5513
600V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Forward Blocking Voltage (Repetitive), V
FBOM
(rep)
NTE5511
600V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5512
600V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5513
700V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Average DC Forward Current, I
F(av)
(T
C
= +75
C mounted on heat sink, conduction angle or 180
)
3.2A
. . . . . . . . . . . . . . . . . . . .
RMS Forward Current (T
C
= +75
C mounted on heat sink), I
FRMS
5A
. . . . . . . . . . . . . . . . . . . . . . . . .
Peak Surge Current (For one cycle of applied voltage), i
FM(surge)
60A
. . . . . . . . . . . . . . . . . . . . . . . . .
SubCycle Surge (NonRepetitive, for a period of 1ms to 8.3ms), I
2
t
15A
2
sec
. . . . . . . . . . . . . . . . . .
Rate of Change of Forward Current (Note 1), di/dt
200A/
s
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate Power (Peak, Forward, or Reverse, for 10
s duration, Note 2), P
GM
13W
. . . . . . . . . . . . . . . .
Average Gate Power (Note 2), P
GAV
500mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Case Temperature Range, T
C
40
to +100
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
40
to +125
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. V
FB
= v
BOO
(min value), I
GT
= 200mA, 0.5
s rise time
Note 2. Any values of peak gate current or peak gate voltage to give the maximum gate power is
permissible.
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