NTE5550 thru NTE5558
Silicon Controlled Rectifiers
Description:
The NTE5550 thru NTE5558 SCR's are designed primarily for halfwave AC control applications,
such as motor controls, heating controls and power supply crowbar circuits.
Features:
D
Glass Passivated Junctions with Center Gate Fire for Greater Parameter Uniformity and Stability.
D
Small, Rugged, Thermowatt Constructed for Low Thermal Resistance, High Heat Dissipation
and Durability.
D
Blocking Voltage to 800 Volts
D
300A Surge Current Capability
Absolute Maximum Ratings:
Peak Reverse Blocking Voltage (Note 1), V
RRM
NTE5550
50V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5552
200V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5554
400V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5556
600V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5558
800V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Current (T
C
= +85
C), I
T(RMS)
25A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(All Conduction Angles), I
T(AV)
16A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak NonRepetitive Surge Current (8.3ms), I
TSM
300A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(1/2 Cycle, Sine Wave, 1.5ms)
350A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Peak Gate Power, P
GM
20W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Average Gate Power, P
G(AV)
0.5W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Peak Gate Current, I
GM
2A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
40
to +125
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
40
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoCase, R
thJC
1.5
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. V
RRM
for all types can be applied on a continuous dc basis without incurring damage.
Ratings apply for zero or negative gate voltage. Devices should not be tested for block-
ing capability in a manner such that the voltage supplied exceeds the rated blocking
voltage.
Electrical Characteristics: (T
C
= +25
C unless otherwise noted.)
Parameter
Symbol
Min
Typ
Max Unit
Peak Forward Blocking Voltage, (T
J
= +125
C)
NTE5550
NTE5552
NTE5554
NTE5556
NTE5558
V
DRM
50
200
400
600
800
V
Peak Forward or Reverse Blocking Current,
(Rated V
DRM
or V
RRM
)
T
J
= +25
C
T
J
= +125
C
I
DRM
, I
RRM
10
2
A
mA
Forward "ON" Voltage, (I
TM
= 50A, Note 2)
V
TM
1.8
V
Gate Trigger Current (Continuous DC),
T
C
= +25
C
(Anode Voltage = 12Vdc, R
L
= 100
) T
C
= 40
C
I
GT
25
40
75
mA
Gate Trigger Voltage (Continuous DC)
(Anode Voltage = 12Vdc, R
L
= 100
, T
C
= 40
C)
V
GT
1
1.5
V
Gate NonTrigger Voltage
(Anode Voltage = Rated V
DRM
, R
L
=100
, T
J
= +125
C)
V
GD
0.2
V
Holding Current
(Anode Voltage = 12Vdc, T
C
= 40
C)
I
H
35
40
mA
TurnOn Time
(I
TM
= 25A, I
GT
= 50mAdc)
t
gt
1.5
2
s
TurnOff Time (V
DRM
= rated voltage)
(I
TM
=25A, I
R
= 25A)
(I
TM
=25A, I
R
= 25A, T
J
= +125
C)
t
q
15
35
s
Critical Rate of Rise of OffState Voltage
(Gate Open, Rated V
DRM
, Exponential Waveform)
dv/dt
50
V/
s
Note 2. Pulse Test: Pulse Width
300
s, Duty Cycle
2%.
.250 (6.35)
Max
.500
(12.7)
Max
.500
(12.7)
Min
.110 (2.79)
.420 (10.67)
Max
.070 (1.78) Max
Cathode
.100 (2.54)
Anode/Tab
Gate
.147 (3.75)
Dia Max
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