NTE5562, NTE5564, NTE5566
Silicon Controlled Rectifiers (SCR's)
Description:
The NTE5562, NTE5564 and NTE5566 are silicon controlled rectifiers in a TO48 isolated stud
TO48 type package designed for industrial and consumer applications such as power supplies, bat-
tery chargers, temperature, motor, light and welder controls.
Absolute Maximum Ratings:
Repetitive Peak OffState Voltage & Reverse Voltage (T
J
= +100
C), V
DRM
, V
RRM
NTE5562
200
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5564
400V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5566
600V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RMS OnState Current (T
C
= +75
C), I
T(RMS)
35A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Surge (NonRepetitive) OnState Current, I
TSM
300A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak GateTrigger Current (3
s Max), I
GTM
20
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak GatePower Dissipation (I
GT
for 3
s Max), P
GM
20W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Average Gate Power Dissipation, P
G(AV)
20W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Temperature Range, T
oper
40
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
40
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Typical Thermal Resistance, JunctiontoCase, R
thJC
1.6/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (At Maximum Ratings and Specified Case Temperatures)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Peak OffState Current
I
DRM
,
I
RRM
T
J
= +100
C, Gate Open, V
DRM
&V
RRM
2.0
mA
Maximum OnState Voltage (Peak)
V
TM
T
C
= +25
C
1.6
V
DC Holding Current
I
HO
T
C
= +25
C, Gate Open
50
mA
DC Gate Trigger Current
I
GT
Anode Voltage = 12Vdc, R
L
= 30
,
T
C
=+ 25
C
30
mA
DC Gate Controlled TurnOn Time
T
GT
I
GT
= 150mA , t
D
+t
R
2.5
s
Critical Rate of Rise of OffState Voltage
Critical
dv/dt
T
C
= +100
C, Gate Open
100
V/
s
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