NTE48
Silicon NPN Transistor
Darlington, General Purpose Amplifier,
High Current
Absolute Maximum Ratings:
CollectorEmitter Voltage, V
CES
50V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorBase Voltage, V
CBO
60V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EBO
12V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Collector Current, I
C
1000mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
A
= +25
C), P
D
1.0W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
C
8.0mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
C
= +25
C), P
D
2.5W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
C
20mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoCase, R
thJC
50
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoAmbient, R
thJA
125
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
CollectorEmitter Breakdown
Voltage
V
(BR)CES
I
C
= 1mA, I
B
= 0, Note 1
50
V
CollectorBase Breakdown Voltage
V
(BR)CBO
I
C
= 1.0
A, I
E
= 0
600
V
EmitterBase Breakdown Voltage
V
(BR)EBO
I
E
= 10
A, I
C
= 0
12
V
Collector Cutoff Voltage
I
CBO
V
CB
= 40V, I
E
= 0
100
nA
Emitter Cutoff Current
I
EBO
V
BE
= 10V, I
C
= 0
100
nA
Electrical Characteristics (Cont'd): (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
ON Characteristics (Note 1)
DC Current Gain
h
FE
I
C
= 200mA, V
CE
= 5V
25,000
I
C
= 1000mA, V
CE
= 5V
4,000
40,000
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 1000mA, I
B
= 2mA
1.5
V
BaseEmitter ON Voltage
V
BE(on)
I
C
= 1000mA, V
CE
= 5V
2.0
V
SmallSignal Characteristics
Current GainBandwidth Product
f
T
I
C
= 200mA, V
CE
= 5V,
f = 100MHz
100
1000
MHz
CollectorBase Capacitance
C
cb
V
CB
= 10V, I
E
= 0, f = 1MHz
10
pF
Note 1. Pulse Test: Pulse Width
300
s, Duty Cycle
2%
B
C
E
.026 (.66)
Dia Max
Seating Plane
.100 (2.54)
.240 (6.09) Max
.339
(8.62)
Max
.512
(13.0)
Min
.200
(5.08)
Max
E B C
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