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Электронный компонент: NTE56016

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NTE56015 thru NTE56018
TRIAC, 25 Amp
Description:
The NTE56015 through NTE56018 series of TRIACs are high performance glass passivated PNPN
devices in a TO220 type package designed for general purpose applications where moderate gate
sensitivity is required.
Absolute Maximum Ratings: (T
A
= +25
C unless otherwise specified)
Repetitive Peak OffState Voltage (T
J
= 40
to +125
C, R
GK
= 1k
), V
DRM
NTE56015
200V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE56016
400V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE56017
600V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE56018
800V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
OnState Current (All Conduction Angles, T
C
= +85
C), I
T(RMS)
25A
. . . . . . . . . . . . . . . . . . . . . . . . . .
NonRepetitive OnState Current (Half Cycle), I
TSM
60Hz
275A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
50Hz
250A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Fusing Current (t = 10ms), I
2
t
312A
2
s
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Gate Current (t = 10
s Max), I
GM
4A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Gate Dissipation (t = 10
s Max), P
GM
10W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate Dissipation (t = 20ms Max), P
G(AV)
1W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
40
to +125
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
40
to +125
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoCase, R
thJC
1.5K/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoAmbient, R
thJA
60K/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (During Soldering, 1.6mm from case, 10sec max), T
L
+250
C
. . . . . . . . . . . . . . .
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OffState Leakage Current
I
DRM
V
D
= V
DRM
, R
GK
= 1k
, T
J
= +25
C
10
A
V
D
= V
DRM
, R
GK
= 1k
, T
J
= +125
C
3
mA
OnState Voltage
V
T
I
T
= 37.5A, T
J
= +25
C
1.4
V
OnState Threshold Voltage
V
T(TO)
T
J
= +125
C
0.85
V
OnState Slope Resistance
r
T
T
J
= +125
C
13
m
Electrical Characteristics (Cont'd): (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Gate Trigger Current
I
GT
V
D
= 12V, Note 1
50
mA
Gate Trigger Voltage
V
GT
V
D
= 12V, All Quadrants
2.5
V
Holding Current
I
H
R
GK
= 1k
50
mA
Critical RateofRise
dv/dt
V
D
= 0.67 x V
DRM
, R
GK
= 1k
, T
J
= +125
C
500
V/
s
Critical RateofRise, OffState
dv/dt
c
I
T
= 25A, di/dt = 11A/ms, T
C
= +85
C
5
V/
s
Note 1. For either polarity of gate voltage with reference to electrode MT
1
.
.250 (6.35)
Max
.500
(12.7)
Max
.500
(12.7)
Min
.110 (2.79)
.420 (10.67)
Max
.070 (1.78) Max
MT
1
.100 (2.54)
MT
2
Gate
.147 (3.75)
Dia Max
MT
2