NTE3323
Insulated Gate Bipolar Transistor
NChannel Enhancement Mode,
High Speed Switch
Features:
D
High Input Impedance
D
High Speed
D
Low Saturation Voltage
D
Enhancement Mode
Applications:
D
High Power Switching
D
Motor Control
Absolute Maximum Raings: (T
A
= +25
C unless otherwise specified)
CollectorEmitter Voltage, V
CES
1200V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GateEmitter Voltage, V
GES
20V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
DC
25A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulse (1ms)
50A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation (T
C
= +25
C), P
C
200W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
+150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Gate Leakage Current
I
GES
V
GE
=
20V, V
CE
= 0
500
nA
Collector Cutoff Current
I
CES
V
CE
= 1200V, V
GE
= 0
1.0
mA
CollectorEmitter Breakdown Voltage
V
(BR)CES
I
C
= 2mA, V
GE
= 0
1200
V
GateEmitter Cutoff Voltage
V
GE(off)
I
C
= 25mA, V
CE
= 5V
3.0
6.0
V
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 25A, V
GE
= 15V
3.0
4.0
V
Input Capacitance
C
ies
V
CE
= 10V, V
GE
= 0, f = 1MHz
3200
pF
Rise Time
t
r
V
CC
= 600V
0.30
0.60
s
TurnOn Time
t
on
0.40
0.80
s
Fall Time
t
f
0.25
0.50
s
TurnOff Time
t
off
0.80
1.50
s
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