NTE56030 & NTE56031
TRIAC, 40 Amp
Isolated Tab
Description:
The NTE56030 and NTE56031 are 40 Amp TRIACs in a TO218 type package with an isolated tab
designed to be driven directly with IC and MOS devices.
Absolute Maximum Ratings:
Peak Repetitive OffState Voltage (Gate Open, T
J
= +110
C, Note 1), V
DRM
NTE56030
400V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE56031
600V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RMS OnState Current (T
C
= +80
C, 360
Conduction Angle), I
T
(RMS)
40A
. . . . . . . . . . . . . . . . . . .
Peak NonRepetitive Surge Current (One Cycle, at 50Hz or 60Hz), I
TSM
400A
. . . . . . . . . . . . . . . . .
Peak GateTrigger Current (t = 3
s), I
GTM
4A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak GatePower Dissipation (I
GT
I
GTM
), P
GM
40W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Average GatePower Dissipation, P
G(AV)
800mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
40
to +110
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
40
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Typical Thermal Resistance, JunctiontoCase, R
thJC(DC)
0.95
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. All values apply in either direction.
Electrical Characteristics: (T
C
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Peak OffState Current
I
DRM
T
J
= +110
C, V
D
= V
DRM
, Gate Open, Note
1
0.5
mA
Gate Trigger Current
Quadrant I, II, III
I
GT
V
D
= 12V, R
L
= 30
T2 (+) G (+), T2 () G () Quads I and III
100
mA
Quadrant IV
T2 (+) G (), T2 () G (+) Quads II and IV
150
mA
Gate Trigger Voltage
V
GT
V
D
= 12V, R
L
= 30
2.5
V
Gate NonTrigger Voltage
V
GD
V
D
= V
DRM
, T
J
= +110
C, R
L
= 3k,
Pulse Duration > 20
s, Note 1
0.2
V
Holding Current
I
H
Gate Open, Note 1
100
mA
Peak OnState Voltage
V
TM
I
T
= 40A, Note 1
1.8
V
Note 1. All values apply in either direction.
Electrical Characteristics (Cont'd): (T
C
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Gate Controlled TurnOn Time
t
gt
V
D
= V
DRM
, I
T
= 10A (Peak), I
GT
= 200mA,
t
R
= 0.1
s
3
s
Critical Rate of Rise of
OffState Voltage
dv/dt
V
D
= V
DRM
, Gate Open, T
C
= +110
C, Note
1
200
V/
s
Critical Rate of Rise of
Commutation Voltage
dv/dt(c) V
D
= V
DRM
, I
T
= 40A, T
C
= +80
C
Gate Unenergized, Note 1
5
V/
s
Note 1. All values apply in either direction.
.600 (15.24)
MT
1
MT
2
Gate
Isolated
.060 (1.52)
.173 (4.4)
.215 (5.45)
.055 (1.4)
.015 (0.39)
.500
(12.7)
Min
.430
(10.92)
.550
(13.97)
.156
(3.96)
Dia.
NOTE: Dotted line indicates that case may have square corners.
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