NTE2335
Silicon NPN Transistor
Darlington
w
/Internal Zener Diode for Line Operated TV
Features:
D
Excellent Wide Safe Operating Area
D
Included Avalanche Diode
D
High DC Current Gain
Absolute Maximum Ratings: (T
C
= +25
C unless otherwise specified)
CollectorBase Voltage, V
CBO
60
15V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorEmitter Voltage, V
CEO
60
15V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EBO
6V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
5A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
20A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Dissipation, P
C
80W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
+150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
C
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
CollectorBase Breakdown Voltage
V
(BR)CBO
I
C
= 10mA, I
E
= 0
45
60
75
V
CollectorEmitter Breakdown Voltage
V
(BR)CBO
I
C
= 100mA, I
B
= 0
45
60
75
V
Emitter Cutoff Current
I
EBO
V
EB
= 6V, I
C
= 0
100
A
DC Current Gain
h
FE
V
CE
= 5V, I
C
= 500mA
2000
20000
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 500mA, I
B
= 1mA
1.5
V
I
C
= 1A, I
B
= 1mA
2.5
V
BaseEmitter Voltage
V
BE
V
CE
= 5V, I
C
= 500mA
1.8
V
Allowable Energy
E
T
80
W.sec
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