NTE233
Silicon NPN Transistor
Video IF, Oscillator
Absolute Maximum Ratings:
CollectorEmitter Voltage, V
CEO
30V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorBase Voltage, V
CBO
30V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EBO
3V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
100mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
A
= +25
C), P
T
625mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate above +25
C
5mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
+150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (During Soldering, 1/16"
1/32" from case, 10sec), T
L
+230
C
. . . . . . . . . . . . . . .
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
CollectorBase Breakdown Voltage
V
(BR)CBO
I
C
= 100
A, I
E
= 0
30
V
EmitterBase Breakdown Voltage
V
(BR)EBO
I
E
= 10
A, I
C
= 0
3
V
Collector Cutoff Current
I
CBO
V
CB
= 30V, I
E
= 0
50
nA
I
CEO
V
CE
= 30V, I
B
= 0
1
A
DC Pulse Current Gain
h
FE
I
C
= 10mA, V
CE
= 10V, Note 1
20
100
Collector Saturation Voltage
V
CE(sat)
I
C
= 20mA, I
B
= 0.1mA, Note 1
0.6
V
CollectorEmitter Sustaining Voltage
V
CEO(sus)
I
C
= 1mA, I
B
= 0, Note 1
30
V
Current GainBandwidth Product
f
T
I
C
= 10mA, V
CE
= 10V,
f = 100MHz
300
700
MHz
Power Gain, Fixed Neutralization
G
pe
I
C
= 10mA, V
CE
= 10V,
f = 45MHz
25
dB
Reverse Transfer Capacitance
C
re
I
E
= 0, V
CB
= 10V, f
1MHz
0.6
1.1
pF
Output Admittance, Input Short
Circuit
g
oe
I
C
= 10mA, V
CE
= 10V,
f = 45MHz
30
200
mho
Note 1. Pulse Test: Pulse Width = 300
s, Duty Cycle = 1%.
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