NTE5645
TRIAC 10A
Isolated Tab
Description:
The NTE5645 is an 10 Amp TRIAC in a TO220 type package designed to be driven directly with IC
and MOS devices and features proprietary, voidfree glass passivated chips.
This device is a bidirectional triode thyristor and may be switched from offstate to conduction for
either polarity of applied voltage with positive or negative gate trigger current. The NTE5645 is de-
signed for control applications in lighting, heating, cooling and static switching relays.
Absolute Maximum Ratings:
Repetitive Peak OffState Voltage (Gate Open, T
J
= +100
C), V
DRM
600V
. . . . . . . . . . . . . . . . . . . . .
RMS OnState Current (T
C
= +75
C, Conduction Angle of 180
C), I
T(RMS)
10A
. . . . . . . . . . . . . . . . .
Peak Surge (NonRepetitive) OnState Current (One Cycle, 50Hz or 60Hz), I
TSM
100A
. . . . . . . . .
Peak GateTrigger Current (3
s Max), I
GTM
4A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak GatePower Dissipation (I
GT
I
GTM
for 3
s Max), P
GM
40W
. . . . . . . . . . . . . . . . . . . . . . . . . . .
Average GatePower Dissipation, P
G(AV)
200mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Temperature Range, T
J
40
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
40
to +100
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Typical Thermal Resistance, JunctiontoCase, R
thJC
2.5
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
C
= +25
C, Maximum Ratings unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ Max Unit
Peak OffState Current
I
DRM
V
DRM
= 600V, Gate Open, T
J
= +100
C
2
mA
Max. OnState Voltage
V
TM
I
T
= 14A
2.2
V
DC Holding Current
I
H
Gate Open
50
mA
Critical RateofRise of OffState
Voltage
Critical
dv/dt
V
D
= 600V, Gate Open, T
C
= +100
C
5
V/
s
DC Gate Trigger Current
T
2
(+) Gate (+), T
2
() Gate ()
T
2
(+) Gate (), T
2
() Gate (+)
I
GT
V
D
= 12V, R
L
= 30
50
80
mA
mA
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