NTE5661
TRIAC, 10 Amp
Description:
The NTE5661 is a TRIAC in a TO64 type stud mount package designed primarily for fullwave AC
control applications such as light dimmers, motor controls, heating controls, power supplies or wher-
ever fullwave silicon gate controlled solidstate devices are needed. TRIAC type thyristors switch
from a blocking to a conducting state for either polarity of applied anode voltage with positive or nega-
tive gate triggering.
Features:
D
Low "ON" Voltage
D
Gate Triggering Guaranteed in Four Modes
Absolute Maximum Ratings:
Repetitive Peak OffState Voltage (T
J
= +100
C, Note 1), V
DRM
50V
. . . . . . . . . . . . . . . . . . . . . . . . . .
OnState RMS Current (T
C
= +75
C), I
T
RMS
10A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Surge Current (One Full Cycle, 60Hz, T
J
= 40
to +100
C), I
TSM
100A
. . . . . . . . . . . . . . . . . .
Circuit Fusing Considerations (T
J
= 40
to +100
C, t = 1.0 to 8.3ms), I
2
t
40A
2
sec
. . . . . . . . . . . . . .
Peak Gate Power, P
GM
10W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Average Gate Power, P
G(AV)
0.5W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Gate Current, I
GM
2A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
40
to +100
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
40
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoCase, R
thJC
2
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoAmbient, R
thJA
50
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Stud Torque
15 in. lb.
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Ratings apply for open gate conditions. Thyristor devices shall not be tested with a constant
current source for blocking capability such that the voltage applied exceeds the rated block-
ing voltage.
Electrical Characteristics: (T
C
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
Peak Blocking Current (Either Direction)
I
DRM
V
DRM
= 50V, T
J
= +100
C, Gate Open
2.0
mA
OnState Voltage (Either Direction)
V
TM
I
TM
= 14A Peak
1.3
1.8
V
Gate Trigger Current, Continuous DC
All Modes
I
GT
Main Terminal Voltage = 12V, R
L
= 100
40
mA
MT
2
(+), G (+); MT
2
(), G ()
50
mA
Gate Trigger Voltage, Continuous DC
V
GT
Main Terminal Voltage = 12V, R
L
= 100
0.9
2.0
V
V
GD
Main Terminal Voltage = 50V, R
L
= 100
,
T
J
= +100
C
0.2
V
Holding Current (Either Direction)
I
H
Main Terminal Voltage = 12V,
Gate Open, Initiating Current = 100mA
30
mA
TurnOn Time
t
on
I
TM
= 14A, I
GT
= 100mA
1.5
s
Blocking Voltage Application Rate
at Commutation
dv/dt
V
DRM
= 50V, T
J
= +75
C, Gate Open
5.0
V/
s
.125 (3.17) Max
.431
(10.98
Max
.855
(21.7)
Max
.453
(111.5)
Max
1032 UNF2A
MT
2
MT
1
Gate
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