NTE5726
Powerblock Module
Description:
The NTE5726 uses high voltage power thyristors/diodes and is electrically isolated from the metal
base, allowing common heatsinks and compact assemblies to be built. This device is intended for
general purpose applications such as battery chargers, welders and plating equipment and where
high voltage and high current are required.
Features:
D
High Voltage
D
Electrically Isolated Base Plate
D
3000V
RMS
Isolating Voltage
D
High Surge Capability
D
Large Creepage Distances
Ratings and Characteristics:
Average Forward Current (T
C
= +85
C, 180
Conduction, Half Sine Wave), I
F(AV)
160A
. . . . . . . . . .
Maximum RMS OnState Current (As AC Switch), I
T(RMS)
355A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Repetitive Peak Reverse and OffState Blocking Voltage, V
RRM
, V
DRM
1600V
. . . . . . . .
Maximum NonRepetitive Peak Reverse Voltage, V
RSM
1700V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Peak Reverse and OffState Leakage Current (T
J
= +125
C), I
RRM
, I
DRM
50mA
. . . . . .
RMS Isolation Voltage (50Hz, Circuit to Base, All Terminals Shorted, t = 1s), V
ISO
3000V
. . . . . . . .
Critical Rate of Rise of OffState Voltage (T
J
= +125
C), dv/dt
(Linear to 80% Rated V
DRM
)
500V/
s
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(Linear to 67% Rated V
DRM
)
1000V/
s
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
40
to +125
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
40
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoCase (Per Junction, DC Operation), R
thJC
0.170
C/W
. . . . . . . . .
Thermal Resistance, CasetoSink (Per Module, Note 1), R
thCS
0.05
C/W
. . . . . . . . . . . . . . . . . . . .
Note 1. Mounting surface flat, smooth and greased.
Electrical Specifications:
Parameter
Symbol
Test Conditions
Rating
Unit
Maximum Peak OneCycle
I
FSM
t = 10ms
Sinusoidal Half Wave, 100% V
RRM
4300
A
NonRepetitive Surge Current
t = 8.3ms
Reapplied, Initial T
J
= +125
C
4500
A
t = 10ms
Sinusoidal Half Wave, No Voltage
5100
A
t = 8.3ms
Reapplied, Initial T
J
= +125
C
5350
A
Maximum I
2
t for Fusing
I
2
t
t = 10ms
Sinusoidal Half Wave, 100% V
RRM
92.5
A
2
s
t = 8.3ms
Reapplied, Initial T
J
= +125
C
84.4
A
2
s
t = 10ms
Sinusoidal Half Wave, No Voltage
131.0
A
2
s
t = 8.3ms
Reapplied, Initial T
J
= +125
C
119.3
A
2
s
Maximum I
2
p
t
I
2
p
t
t = 0.1 to 10ms, no voltage reapplied
1310
A
2
p
t
Threshold Voltage, Low level
V
T(TO)1
T
J
= +125
C, (16.7% x
x I
T(AV)
< I <
x I
T(AV)
)
0.88
V
Threshold Voltage, High level
V
T(TO)2
T
J
= +125
C, (
x I
T(AV)
< I < 20 x
x I
T(AV)
)
1.12
V
OnState Slope Resistance, Low Level
r
t1
T
J
= +125
C, (16.7% x
x I
T(AV)
< I <
x I
T(AV)
)
1.20
m
OnState Slope Resistance, High Level
r
t2
T
J
= +125
C, (
x I
T(AV)
< I < 20 x
x I
T(AV)
)
0.86
m
Maximum OnState Voltage Drop
V
TM
T
J
= +125
C, I
TM
=
x I
T(AV)
, 180
Condition,
Av. Power = V
T(TO)
x I
T(AV)
+ r
t
x (I
T(RMS)
)
2
1.5
V
Maximum Holding Current
I
H
Anode Supply = 12V, Initial I
T
= 30A, T
J
= +25
C
500
mA
Maximum Latching Current
I
L
Anode Supply = 12V, Resistive Load = 1
,
Gat Pulse: 10V, 100
s, T
J
= +25
C
300
mA
Maximum Peak Gate Power
P
GM
T
J
= +125
C, t
p
5ms
10
W
Maximum Average Gate Power
P
G(AV)
T
J
= +125
C, f = 50Hz
2.0
W
Maximum Peak Gate Current
+I
GM
T
J
= +125
C, t
p
5ms
3.0
A
Maximum Peak Negative Gate Voltage
V
GT
T
J
= +125
C, t
p
5ms
5.0
V
Maximum Required DC Gate Trigger
V
GT
T
J
= 40
C
Anode Supply = 12V,
4.0
V
Voltage to Trigger
T
J
= +25
C
Resistive Load: R
A
= 1
3.0
V
T
J
= +125
C
2.0
V
Maximum Required DC Gate Trigger
I
GT
T
J
= 40
C
Anode Supply = 12V,
350
mA
Current to Trigger
T
J
= +25
C
Resistive Load: R
A
= 1
200
mA
T
J
= +125
C
100
mA
Maximum Gate Voltage that will not
Trigger
V
GD
T
J
= +125
C, Rated V
DRM
Applied
0.3
V
Maximum Gate Current that will not
Trigger
I
GD
T
J
= +125
C, Rated V
DRM
Applied
10
mA
Maximum Rate of Rise of
TurnedOn Current
di/dt
T
J
= +125
C, I
TM
= 400A, Rated V
DRM
Applied
500
A/
s
Typical Delay Time
t
d
T
J
= +25
C, Gate Current = 1A di
G
/dt = 1A/
s,
1.0
s
Typical Rise Time
t
r
V
D
= 0.67% V
DRM
2.0
s
Typical TurnOff Time
t
q
T
J
= +25
C, I
TM
= 300A, dI/dt = 15A/
s, V
R
= 50V,
dV/dt = 20V/
s, Gate 0V, 100
50150
s
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