NTE573
Schottky Barrier Rectifier
Description:
The NTE573 is an axial lead metaltosilicon power diode using the Schottky Barrier principle. State
oftheart geometry features epitaxial construction with oxide passivation and metal overlap contact.
This device is ideally suited for use in lowvoltage, highfrequency inverters, as free wheeling diodes,
and polarity protection diodes.
Features:
D
Low Forward Voltage
D
Low Power Loss
D
High Surge Capacity
D
Low Stored Charge Majority Carrier Conduction
D
High Efficiency
D
High Switching Capability
Absolute Maximum Ratings:
Peak Repetitive Reverse Voltage, V
RRM
60V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Working Peak Reverse Voltage, V
RWM
60V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DC Blocking Voltage, V
R
60V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RMS Reverse Voltage, V
R(RMS)
42V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Average Forward Rectified Current, I
O
5A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NonRepetitive Peak Surge Current, I
FSM
(Surge applied at rated load conditions halfwave, single phase, 60Hz, T
L
= +70
C)
250A
.
Operating Junction Temperature Range, T
J
65
to +125
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
65
to +125
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Instantaneous Forward Voltage
V
F
I
F
= 5A
0.70
V
I
F
= 15A
0.95
V
Instantaneous Reverse Current
I
R
V
R
= 60V, T
L
= +25
C
5
mA
V
R
= 60V, T
L
= +100
C
50
mA
Junction Capacitance
C
P
Note 1
380
pF
Note 1. Measured at 1MHz and applied reverse voltage of 4 volts.
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