NTE2300
Silicon NPN Transistor
High Voltage, Horizontal Output
Description:
The NTE2300 is a silicon NPN transistor in a TO3P type package designed for use in large screen
color TV deflection circuits.
Features:
D
High Breakdown Voltage and High Reliability
D
High Switching Speed
Absolute Maximum Ratings: (T
A
= +25
C unless otherwise specified)
CollectorBase Voltage, V
CBO
1500V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorEmitter Voltage, V
CEO
800V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EBO
7V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
5A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
16A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Dissipation (T
C
= +25
C), P
D
120W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
+150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Charactertistics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
I
CBO
V
CB
= 800V, I
E
= 0
10
A
Emitter Cutoff Current
I
EBO
V
EB
= 5V, I
C
= 0
1
mA
DC Current Gain
h
FE
V
CE
= 5V, I
C
= 1A
8
CurrentGain Bandwidth Product
f
T
V
CE
= 10V, I
C
= 1A
3
MHz
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 4A, I
B
= 0.8A
5.0
V
BaseEmitter Saturation Voltage
V
BE(sat)
I
C
= 4A, I
B
= 0.8A
1.5
V
CollectorBase Breakdown Voltage
V
(BR)CBO
I
C
= 5mA, I
E
= 0
1500
V
CollectorEmitter Breakdown Voltage
V
(BR)CEO
I
C
= 100mA, R
BE
=
800
V
EmitterBase Breakdown Voltage
V
(BR)EBO
I
E
= 200mA, I
C
= 0
7
V
Fall Time
t
f
I
C
= 4A, I
B1
= 0.8A, I
B2
= 1.6A
0.4
s
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