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Электронный компонент: NTE5829

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NTE5826 thru NTE5829
Silicon Power Rectifier Diode, 50 Amp
Description:
The NTE5826 thru NTE5829 are silicon power rectifier diodes in a pressfit type package designed
for use in all mediumcurrent applications or for higher current industrial alternators and chassis
mounted power supply rectifiers.
Features:
D
50 Amp @ T
C
= +150
C
D
600 Amp Surge Capability
D
Rugged Construction
D
Available in Standard (NTE5826, NTE5828) and Reverse (NTE5827, NTE5829) Polarity
Absolute Maximum Ratings:
Peak Repetitive Reverse Voltage, V
RRM
NTE5826, NTE5827*
400V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5828, NTE5829*
800V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Working Peak Reverse Voltage, V
RWM
NTE5826, NTE5827*
400V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5828, NTE5829*
800V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DC Blocking Voltage, V
B
NTE5826, NTE5827*
400V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5828, NTE5829*
800V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NonRepetitive Peak Reverse Voltage, V
RSM
NTE5826, NTE5827*
450V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5828, NTE5829*
850V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RMS Reverse Voltage, V
R(RMS)
NTE5826, NTE5827*
280V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5828, NTE5829*
560V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Average Rectified Forward Currnt (Single phase, resistive load, T
C
= +150
C), I
O
50A
. . . . . . . . . .
NonRepetitive Peak Surge Current (Surge applied at rated load conditions), I
FSM
600A
. . . . . . . .
Operating Junction Temperature Range, T
J
65
to +195
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
65
to +195
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Thermal Resistance, JunctiontoCase, R
thJC
0.8
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Standard polarity is cathode to case, (*) indicated anode to case.
Electrical Characteristics:
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Instantaneous Forward Voltage
v
F
i
F
= 157A, T
J
= +25
C
1.10
1.18
V
i
F
= 50A, T
J
= +25
C
0.95
1.00
V
Reverse Current
i
R
V
RRM
= Rated Voltage, T
C
= +25
C
0.05
0.2
mA
V
RRM
= Rated Voltage, T
C
= +150
C
1.0
2.0
mA
.640
(16.25)
Dia
Max
.190 (4.82) Max
.140 (3.55) Dia Max
.103 (2.62) Dia Max
.505 (12.85) Dia Max
.600
(15.24)
Max
.250
(6.35)
Max
Seating Plane