NTE583
Silicon Rectifier Diode
Schottky, RF Switch
Description:
The NTE583 is a metal to silicon junction diode featuring high breakdown, low turnon voltage and
ultrafast switching. This device is primarly intented for high level UHF/VHF detection and pulse appli-
cation with broad dynamic range.
Absolute Maximum Ratings: (T
A
= +25
C, Limiting Values)
Repetitive Peak Reverse Voltage, V
RRM
70V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Continuous Current (Figure 1), I
F
15mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Surge NonRepetitive Forward Current (t
p
1s, Figure 1), I
FSM
50mA
. . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
65
to +200
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
65
to +200
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoAmbient (Figure 1), R
thJA
400
C/W
. . . . . . . . . . . . . . . . . . . . . . . .
Figure 1
d
d
Infinite heat sinks
* d = 4mm
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Static Characteristics
Breakdown Voltage
V
(BR)
I
R
= 10
A
70
V
Continuous Forward Voltage
V
F
(1)
I
F
= 1mA
0.41
V
I
F
= 15mA
1
V
Continuous Reverse Current
I
R
(1)
V
R
= 50V
0.2
A
Dynamic Characteristics
Small Signal Capacitance
C
V
R
= 0, f = 1MH
Z
2
pF
Minority Carrier Life Time
I
F
= 5mA, Krakauer Method
100
ps
Note 1. Pulse Test t
p
300
s
<
2%
Color Band Denotes Cathode
1.000
(25.4)
Min
.200
(5.08)
Max
.090 (2.28)
Dia Max
.022 (.509) Dia Max
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