NTE595
Silicon Diode, Dual, Common Cathode,
High Speed
Description:
The NTE595 consists of two silicon diodes in an SOT23 type surface mount package. The cathodes
are common and the device is intended for highspeed switching applications in thick and thinfilm
circuits.
Absolute Maximum Ratings:
Continuous Reverse Voltage, V
R
70V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Repetitive Peak Reverse Voltage, V
RRM
70V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NonRepetitive Peak Forward Current (Per device, t = 1s), I
FSM
500mA
. . . . . . . . . . . . . . . . . . . . . . .
Average Rectified Forward Current (Average over any 20ms period, Note 1), I
F(Av)
250mA
. . . . . .
DC Forward Current, I
F
250mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Repetitive Peak Forward Current, I
FRM
250mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
A
+25
C), P
tot
200mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
+175
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
65
to +175
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoAmbient (Note 2), R
thJA
430K/W
. . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Measured under pulse conditions: t
p
0.5ms, I
F(AV)
= 150mA, t
(av)
1ms, for sinusoidal
operation.
Note 2. Mounted on a ceramic substrate of .314 (8mm) x .393 (10mm) x .027 (0.7mm).
Electrical Characteristics (Per Diode): (T
J
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Forward Voltage
V
F
I
F
= 1mA
715
mV
I
F
= 10mA
855
mV
I
F
= 50mA
1000
mV
I
F
= 150mA
1250
mV
Reverse Current
I
R
V
R
= 70V
5
A
V
R
= 70V, T
J
= +150
C
100
A
Diode Capacitance
C
d
V
R
= 0, f = 1MHz
1.5
pF
Forward Recovery Voltage
(When switched to I
F
= 10mA)
V
fr
t
r
= 20ns
1.75
V
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