NTE3120
Silicon NPN Phototransistor Detector
Features:
D
High Sensitivity
D
GaAs LEDWide Spectral Range, with GaAs LED.
D
Low Dark Current
D
SideView Plastic Package
Absolute Maximum Ratings: (T
A
= +25
C unless otherwise specified)
CollectorEmitter Voltage, V
CEO
20V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterCollector Voltage, V
ECO
5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
20mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Dissipation P
C
100mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Temperature Range, T
opr
25
to +85
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
30
to +100
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
ElectroOptical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Dark Current
I
CEO
V
CE
= 10V
0.01
1.0
A
Photo Current
I
CE(L)
V
CE
= 10V, L = 500 1x, Note 1
1
3
mA
Peak Sensitivity Wavelength
P
V
CE
= 10V
800
nm
Acceptance Half Angle
q
Note 2
35
deg
Rise Time
t
r
V
CC
= 10V, I
CE(L)
= 5mA,
4
10
s
Fall Time
t
f
R
L
= 100
4
10
s
CollectorEmitter Saturation Voltage
V
CE(sat)
I
CE(L)
= 1mA, L = 1000 1x, Note 1
0.2
0.5
V
Note 1. Source: Tungsten 2856
K.
Note 2. The angle when the light current is halved.
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