NTE2387
MOSFET
NChannel Enhancement Mode,
High Speed Switch
Absolute Maximum Ratings:
DrainSource Voltage, V
DS
800V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DrainGate Voltage (R
GS
= 20k
), V
DGR
800V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GateSource Voltage, V
GS
30V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulsed Drain Current, I
DM
16A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Drain Current, I
D
T
C
= +25
C
4.0A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
C
= +100
C
2.5A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Dissipation (T
C
= +25
C), P
tot
125W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
+150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Thermal Resistance, JunctiontoCase, R
thJC
1.0
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
Typical Thermal Resistance, JunctiontoAmbient, R
thJA
60
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
C
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static Characteristics
DrainSource Breakdown Voltage
V
(BR)DSS
I
D
= 250
A, V
GS
= 0
800
V
ZeroGate Voltage Drain Current
I
DSS
V
GS
= 0, V
DS
= 800V, T
C
= +25
C
2
20
A
V
GS
= 0, V
DS
= 800V, T
C
= +125
C
0.1
1.0
mA
GateBody Leakage Current
I
GSS
V
DS
= 0, V
GS
=
30V
10
100
nA
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 1mA
2.1
3.0
4.0
V
Static DrainSource On Resistance
R
DS(on)
V
GS
= 10V, I
D
= 1.5A
2.7
3.0
Dynamic Characteristics
Forward Transconductance
g
fs
V
DS
= 25V, I
D
= 1.5A
3.0
4.3
mho
Input Capactiance
C
iss
V
DS
= 25V, V
GS
= 0, f = 1MHz
1000
1250
pf
Output Capacitance
C
oss
80
120
pf
Reverse Transfer Capactiance
C
rss
30
50
pf
TurnOn Time
t
d(on)
V
DD
= 30V, I
D
= 2.3A, V
GS
= 10V,
10
25
ns
Rise Time
t
r
R
GS
= 50
, R
gen
= 50
25
40
ns
TurnOff Delay Time
t
d(off)
130
150
ns
Fall Time
t
f
40
60
ns
Electrical Characteristics (Cont'd): (T
C
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Dynamic Characteristics (Cont'd)
Internal Drain Inductance
L
D
Measured from contact screw on tab
to center of die
3.5
nH
Measured from drain lead 6mm from
package to center of die
4.5
nH
Internal Source Inductance
L
S
Measured from the source lead
6mm from package to source
bonding pad
7.5
nH
SourceDrain Diode Ratings and Characteristics
Continuous Reverse Drain Current
I
DR
4
A
Pulsed Reverse Drain Current
I
DRM
16
A
Diode Forward Voltage
V
SD
I
F
= 4A, V
GS
= 0
1.0
1.3
V
Reverse Recovery Time
t
rr
I
F
= 4A, di
F
/dt = 100A/
s, V
GS
= 0,
1800
ns
Reverse Recovered Charge
Q
rr
V
R
= 100V
12
C
.420 (10.67)
Max
.500
(12.7)
Max
.500
(12.7)
Min
.250 (6.35)
Max
.147 (3.75) Dia Max
.070 (1.78) Max
.100 (2.54)
Gate
Drain/Tab
Source
.110 (2.79)
PDF 
ZIP