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Электронный компонент: NTE621

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NTE621
Silicon Rectifier, General Purpose, High Voltage,
Standard Recovery
(Surface Mount)
Features:
D
High Temperature Metallurgically Bonded
D
Glass Passivated Junction
D
High Temperature Soldering Guaranteed:
+450
C/5 Seconds at Terminals. Complete Device Submersible Temperature of
+260
C/10 Seconds in Solder Bath.
Maximum Ratings and Electrical Characteristics: (T
A
= +25
C unless otherwise specified.
60Hz, resistive or inductive load. For capacitive load, derate current by 20%.)
Maximum Recurrent Peak Reverse Voltage, V
RRM
400V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum RMS Voltage, V
RMS
280V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum DC Blocking Voltage, V
DC
400V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Average Forward Rectified Current, I
T(AV)
1A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Forward Surge Current, I
FSM
(8.3ms Single Half SineWave Superimposed on Rated Load)
30A
. . . . . . . . . . . . . . . . . . . .
Maximum Instantaneous Forward Voltage (I
T
= 1A), V
F
1.1V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum DC Reverse Current (V
DC
= 400V), I
R
T
A
= +25
C
10
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
A
= +125
C
50
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Full Load Reverse Current (Full Cycle Average at T
A
= +75
C), I
R(AV)
30
A
. . . . . . . . . . .
Typical Junction Capacitance (Note 1), C
J
15pF
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
65
to +175
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
65
to +175
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Thermal Resistance, JunctiontoTerminal (Note 2), R
thJL
30
C/W
. . . . . . . . . . . . . . . . . . .
Maximum Thermal Resistance, JunctiontoAmbient (Note 3), R
thJA
75
C/W
. . . . . . . . . . . . . . . . . . .
Note 1. Measured at 1MHz and applied reverse voltage of 4V
DC
.
Note 2. Thermal resistance, junctiontoterminal, 6.0mm
2
copper pads to each terminal.
Note 3. Thermal resistance, junctiontoambient, 6.0mm
2
copper pads to each terminal.
.105
(2.667)
Max Dia
Solderable Ends
1st Band (Device Type)
2nd Band (Voltage Type)
.022 (.559) Max
.205 (5.207) Max
Two Bands Indicates Cathode