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Электронный компонент: NTE622

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NTE622
Silicon Rectifier, General Purpose, High Voltage,
Fast Recovery
(Surface Mount)
Features:
D
High Temperature Metallurgically Bonded
D
Glass Passivated Junction
D
High Temperature Soldering Guaranteed:
+450
C/5 Seconds at Terminals. Complete Device Submersible Temperature of
+260
C/10 Seconds in Solder Bath.
Maximum Ratings and Electrical Characteristics: (T
A
= +25
C unless otherwise specified.
60Hz, resistive or inductive load. For capacitive load, derate current by 20%.)
Maximum Recurrent Peak Reverse Voltage, V
RRM
400V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum RMS Voltage, V
RMS
280V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum DC Blocking Voltage, V
DC
400V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Average Forward Rectified Current (T
T
= +75
C), I
T(AV)
0.5A
. . . . . . . . . . . . . . . . . . . . . . .
Peak Forward Surge Current, I
FSM
(8.3ms Single Half SineWave Superimposed on Rated Load)
10A
. . . . . . . . . . . . . . . . . . . .
Maximum Instantaneous Forward Voltage (I
T
= 0.5A), V
F
1.2V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum DC Reverse Current (V
DC
= 400V), I
R
T
A
= +25
C
5
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
A
= +125
C
50
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Reverse Recovery Time (T
J
= +25
C, Note 1), t
rr
50ns
. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Typical Junction Capacitance (Note 2), C
J
4pF
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
65
to +175
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
65
to +175
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Thermal Resistance, JunctiontoTerminal (Note 3), R
thJL
70
C/W
. . . . . . . . . . . . . . . . . . .
Maximum Thermal Resistance, JunctiontoAmbient (Note 4), R
thJA
150
C/W
. . . . . . . . . . . . . . . . .
Note 1. Reverse Recovery Test Conditions: I
F
= 0.5A, I
R
= 1A, I
RR
= 0.25A..
Note 2. Measured at 1MHz and applied reverse voltage of 4V
DC
.
Note 2. Thermal resistance, junctiontoterminal, 5.0mm
2
copper pads to each terminal.
Note 3. Thermal resistance, junctiontoambient, 5.0mm
2
copper pads to each terminal.
.066
(1.676)
Max Dia
Solderable Ends
1st Band (Device Type)
2nd Band (Voltage Type)
.022 (.559) Max
.145 (3.683) Max
Two Bands Indicates Cathode