NTE6400 & NTE6400A
Unijunction Transistor
Description:
The NTE6400 & NTE6400A Silicon Unijunction Transistors are three terminal devices having a stable
"N" type negative resistance characteristic over a wide temperature range. A stable peak point volt-
age, a low peak point current, and a high pulse pulse current make these devices useful in oscillators,
timing circuits, trigger circuits, and pulse generators where they can serve the purpose of two conven-
tional silicon or germanium transistors.
These devices are intended for applications where circuit economy is of primary importance.
Absolute Maximum Ratings: (T
A
= +25
C unless otherwise specified)
RMS Power Dissipation, P
D
Unstabilized
450mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Stabilized
600mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
C
3.9mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RMS Emitter Current, I
E
50mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Emitter Current (T
J
= +150
C), I
E(peak)
2A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter Reverse Voltage (T
J
= +150
C)
60V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Interbase Voltage, V
BB
NTE6400
35V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE6400A
55V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Temperature Range, T
opr
Unstabilized
65
to +140
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Stabilized
65
to +175
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
65
to +175
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoCase, R
thJC
0.16
C/mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Intrinsic Standoff Ratio
NTE6400
NTE6400A
V
BB
= 10V, Note 1
0.4
54
0.80
0.67
Interbase Resistance
R
BBO
V
BB
= 3V, I
E
= 0, Note 1
4
12
k
Modulated Interbase Current
I
B2(MOD)
V
BB
= 10V, I
E
= 50mA
6.8
30
mA
Emitter Reverse Current
NTE6400
NTE6400A
I
EO
V
B2E
= 30V, I
B1
= 0
12
1
A
Peak Point Emitter Current
I
P
V
BB
= 25V
25
A
Valley Point Current
I
V
V
BB
= 20V, R
B2
= 100
8
mA
BaseOne Peak Pulse Voltage
V
OB1
3
V
Note 1. The intristic standoff ratio,
, is essentially constant with temperature and interbase volt-
age. It is defined by the following equation:
V
P
=
V
BB
+
200
T
j
Where
V
P
= Peak point emitter voltage
V
BB
= Interbase voltage
T
j
= Junction Temperature (Degrees Kelvin)
Note 2. The interbase resistance is nearly ohmic and increases with temperature in a welldefined
manner. The temperature coefficient at +25
C is approximately 0.8%/
C.
45
.031 (.793)
.018 (0.45) Dia
B2
Emitter
B1
.370 (9.39) Dia Max
.355 (9.03) Dia Max
.260 (6.6)
Max
.500 (12.7)
Min
.210 (5.33) Dia Max
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