NTE6402
Programmable Unijunction Transistor (PUT)
Description:
The NTE6402 is a 3terminal silicon planer passivated PNP device available in the standard plastic
low cost TO98 and TO92 type packages. The terminals are designated as anode, anode gate, and
cathode.
This device has been characterized as a Programmable Unijunction Transistor (PUT), offering many
advantages over conventional unijunction transistors. The designer can select R
1
and R
2
to program
unijunction characteristics such as intrinsic standoff ratio, Interbase resistance, peakpoint emitter
current, and valleypoint current to meet his particular needs.
PUT's are specifically charactrized for long interval timers and other applications requiring low leak-
age and low peak point current. PUT's similar types have been characterized
Applications:
D
SCR Trigger
D
Pulse and Timing Circuits
D
Oscillators
D
Sensing Circuits
D
Sweep Circits
Absolute Maximum Ratings: (T
A
= +25
C unless otherwise specified)
GateCathode Forward Voltage
+40V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GateCathode Reverse Voltage
5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GateAnode Reverse Voltage
+40V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
AnodeCathode Voltage
40V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DC Anode Current (Note 1)
150mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Anode, Recurrent Forward Current
Pulse Width = 100
s, Duty Cycle = 1%
1A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulse Width = 20
s, Duty Cycle = 1%
2A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Anode, NonRecurrent Forward Current (10
s)
20mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Capacitive Discharge Energy (Note 2)
250
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Average Power (Note 1)
300mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Ambient Temperature Range (Note 1)
50
to +100
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Derate currents and powers 1%/
C above 25
C.
Note 2. E = 1/2 CV
2
capacitor discharge energy with no current limiting.
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Peak Current
I
P
V
S
= 10V, R
G
= 1M
2
A
V
S
= 10V, R
G
= 10k
5
A
Offset Voltage
V
T
V
S
= 10V, R
G
= 1M
0.2
1.6
V
V
S
= 10V, R
G
= 10k
0.2
0.6
V
Valley Current
I
V
V
S
= 10V, R
G
= 1M
50
A
V
S
= 10V, R
G
= 10k
70
A
V
S
= 10V, R
G
= 200
1.5
mA
Anode GateAnode Leakage Current
I
GAO
V
S
= 40V, T
A
= +25
C
10
nA
V
S
= 40V, T
A
= +75
C
100
nA
GateCathode Leakage Current
I
GKS
V
S
= 40V, AnodeCathode Short
100
nA
Forward Voltage
V
F
I
F
= 50mA
1.5
V
Pulse Output Voltage
V
O
6
V
Pulse Voltage Rate of Rise
t
r
80
ns
A G K
.190 (4.82) Min
.018 (0.45) Dia Max
.245
(6.23)
Max
.500
(12.7)
Min
.100 (2.54)
.200 (5.08) Max
.065
(1.65)
.140 (3.55) Max
.135 (3.45) Min
Seating
Plane
.021 (.445)
Dia Max
.210
(5.33)
Max
.500
(12.7)
Min
.050 (1.27)
.165 (4.2) Max
.105 (2.67) Max
.100 (2.54)
.105 (2.67) Max
.205 (5.2) Max
A G K
TO92
TO98
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