NTE2327
Silicon NPN Transistor
High Voltage, High Speed Switch
Description:
The NTE2327 is a silicon NPN transistor in a TO126 type package designed for use in converters,
inverters, switching regulators, motor control systems and switching applications.
Absolute Maximum Ratings:
CollectorEmitter Voltage (V
BE
= 0, Peak value), V
CESM
1000V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorEmitter Voltage (Open base), V
CEO
450V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage (Open Collector), V
EBO
5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
0.5A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (t
p
= 2ms)
1A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
B
Continuous
0.2A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
0.3A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Reverse Base Current (Peak Value, Note 1), I
BM
0.3A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
MB
+60
C), P
tot
20W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
+150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
65
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoMounting Base, R
thJMB
4.5K/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoAmbient, R
thJA
100K/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. TurnOff current.
Electrical Characteristics: (T
J
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current (Note 2)
I
CES
V
CEM
= 1000V, V
BE
= 0
100
A
V
CEM
= 1000V, V
BE
= 0, T
J
= +125
C
1
mA
Emitter Cutoff Current
I
EBO
I
C
= 0, V
EB
= 5V
1
mA
DC Current Gain
h
FE
I
C
= 50mA, V
CE
= 5V
50
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 0.1A, I
B
= 10mA
0.8
V
I
C
= 0.2A, I
B
= 20mA
1.0
V
BaseEmitter Saturation Voltage
V
BE(sat)
I
C
= 0.2A, I
B
= 20mA
1.0
V
CollectorEmitter Sustaining Voltage
V
CEO(sus)
I
C
= 100mA, I
Boff
= 0, L = 25mH
450
V
Transition Frequency
f
T
I
C
= 50mA, V
CE
= 10V, f = 1MHz
20
MHz
TurnOn Time
t
on
I
Con
= 0.2A, V
CC
= 250V,
0.25
0.50
s
Storage Time
t
s
I
Bon
= 20mA, I
Boff
= 40mA
2.0
3.5
s
Fall Time
t
f
0.4
1.3
s
Note 2. Measured with a half sinewave voltage.
PDF 
ZIP