NTE6507
Integrated Circuit
NMOS, 8 Bit Microprocessor (MPU)
w
/OnChip Clock OSC
Description:
The NTE6507 integrated circuit is an 8 bit microprocessor in a 28Lead DIP type package which pro-
vides a selection of addressable memory range, interrupt input options, and onchip clock oscillators
and drivers. This device is bus compatible with the MC6800 product offering and is aimed at high
performance, low cost applications where single phase inputs or crystals provide the time base.
Features:
D
Single 5V
5% Power Supply
D
N Channel, Silicon Gate, Depletion Load
Technology
D
8 Bit Parallel Processing
D
Decimal and Binary Arithmetic
D
Thirteen Addressing Modes
D
True Indexing Capability
D
Programmable Stack Pointer
D
Variable Length Stack
D
BiDirectional Data Bus
D
Instruction Decoding and Control
D
8k Addressable Bytes of Memory
D
"Ready" Input
D
Direct Memory Access Capability
D
Bus Compatible with MC6800
D
OnBoard Clock
D
1MHz Operating Frequency
Absolute Maximum Ratings: (Note 1)
Supply Voltage, V
CC
0.3 to +7.0V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input Voltage, V
in
0.3 to +7.0V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Temperature Range, T
A
0 to +70
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. This device contains input protection against damage due to high static voltages or electric
fields; however, precautions should be taken to avoid application of voltages higher than the
maximum rating.
DC Characteristics: (V
CC
= 5V
5%, T
A
= 0
to +70
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Max
Unit
Input High Voltage
Logic and
o(in)
V
IH
+2.0
V
CC
V
Logic
V
CC
0.5
V
CC
+0.25
V
Input Low Voltage
Logic and
o(in)
V
IL
0.3
+0.8
V
Input Loading
RDY
I
IL
V
in
= 0V, V
CC
= 5.25V
10
300
A
Input Leakage Current
Logic (Excluding RDY)
I
in
V
in
= 0 to 5.25V, V
CC
= 0
2.5
A
o(in)
10.0
A
ThreeState (Off State) Input Current
DB0DB7
I
TSI
V
in
= 0.4 to 2.4V, V
CC
= 5.25V
10
A
Output High Voltage
DB0DB7, A0A15, R/W
V
OH
I
LOAD
= 100
A, V
CC
= 4.75V
2.4
V
Output Low Voltage
DB0DB7, A0A15, R/W
V
OL
I
LOAD
= 1.6mA, V
CC
= 4.75V
0.4
V
Power Dissipation
P
D
V
CC
= 5.25V
700
mW
Capaticance
RES, RDY,
C
in
V
in
= 0, T
A
= +25
C, f = 1MHz
10
pF
DB0DB7
15
pF
A0A15, R/W
C
out
12
pF
o(in)
C
O
o(in)
15
pF
Dynamic Operating Characteristics: (V
CC
= 5V
5%, T
A
= 0
to +70
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Max
Unit
Cycle Time
T
CYC
1.00
40
s
o(in)
Low Time
T
L
o
Note 2
480
ns
o(in)
High Time
T
H
o
Note 2
460
ns
o
Neg to
1
Pos Delay
T
01+
Load = 100pF
10
70
ns
o
Neg to
2
Neg Delay
T
02
Load = 100pF
5
65
ns
o
Pos to
1
Neg Delay
T
01
Load = 100pF
5
65
ns
o
Pos to
2
Pos Delay
T
02+
Load = 100pF
15
75
ns
(in)
Rise and Fall Time
T
RO
, T
FO
Note 3
0
30
ns
1(OUT)
Pulse Width
T
PWH
O
1
T
L
O
o
20
T
L
O
o
ns
2(OUT)
Pulse Width
T
PWH
O
2
T
L
O
o
40
T
L
O
o
10
ns
Delay Between
1
and
2
T
D
5
ns
1
and
2
Rise and Fall Times
T
R
, T
F
Load = 1TTL load +30pF, Note 3
25
ns
Note 2. Measured at 50% points.
Note 3. Measured between 10% and 90% points.
PDF 
ZIP
