NTE67
MOSFET
NCh, Enhancement Mode
High Speed Switch
Description:
The NTE67 is a TMOS Power FET in a TO220 type package designed for high voltage, high speed
power switching applications such as switching regulators, converters, solenoid and relay drivers.
Features:
D
Lower R
DS(ON)
D
Improved Inductive Ruggedness
D
Fast Switching Times
D
Lower Input Capacitance
D
Extended Safe Operating Area
D
Improved High Temperature Reliability
Absolute Maximum Ratings:
DrainSource Voltage (T
J
= +25
C to +150
C), V
DSS
400V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DrainGate Voltage (R
GS
= 1M
, T
J
= +25
C to +125
C), V
DGR
400V
. . . . . . . . . . . . . . . . . . . . . . . . .
GateSource Voltage, V
GS
20V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Drain Current, I
D
T
C
= +25
C
4.5A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
C
= +100
C
3.0A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulsed Drain Current (Note 2), I
DM
18A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulsed Gate Current, I
GM
1.5A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulsed Avalanche Energy (Note 3), E
AS
290mJ
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Avalanche Current, I
AS
5.5A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
C
= +25
C), P
D
75W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
C
0.6W/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (During Soldering, 1/8" from case, 5sec max.), T
L
+300
C
. . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoCase, R
thJC
1.67K/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoAmbient, R
thJA
80K/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, CasetoSink (Mounting surface flat, smooth, and greased), R
thCS
0.24K/W
Note 1. Pulse Test: Pulse Width
300
s, Duty Cycle
2%.
Note 2. Repetitive rating: Pulse width limited by max, junction temperature.
Note 3. L = 17mH, V
dd
= 50V, R
G
= 25
, Starting T
J
= +25
C.
Electrical Characteristics: (T
C
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
DrainSource Breakdown Voltage
BV
DSS
V
GS
= 0V, I
D
= 250
A
400
V
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
A
2.0
4.0
V
GateSource Leakage, Forward
I
GSS
V
GS
= 20V
100
nA
GateSource Leakage, Reverse
I
GSS
V
GS
= 20V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= Max. Rating, V
GS
= 0V
250
A
V
DS
= Max. Rating x 0.8, V
GS
= 0V,
T
C
= +125
C
1000
A
OnState DrainSource Current
I
D(on)
V
DS
> I
D(on)
x R
DS(on)
max, V
GS
= 10V, Note 1
4.5
A
Static DrainSource OnState
Resistance
R
DS(on)
V
GS
= 10V, I
D
= 3A, Note 1
1.0
1.5
Forward Transconductance
g
fs
V
DS
50V, I
D
= 3A, Note 1
2.9
4.4
mhos
Input Capacitance
C
iss
V
GS
= 0V, V
DS
= 25V, f = 1MHz
780
pF
Output Capacitance
C
oss
99
pF
Reverse Transfer Capacitance
C
rss
43
pF
TurnOn Delay Time
t
d(on)
V
DD
= 0.5BV
DSS
, I
D
= 5.5A, Z
O
= 12
11
17
ns
Rise Time
t
r
(MOSFET switching times are essentially
independent of operating temperature)
19
29
ns
TurnOff Delay Time
t
d(off)
independent of operating temperature)
37
56
ns
Fall Time
t
f
16
24
ns
Total Gate Charge
(GateSource Plus GateDrain)
Q
g
V
GS
= 10V, I
D
= 5.5A, V
DS
= 0.8 Max. Rating
(Gate charge is essentially independent of
18
30
nC
GateSource Charge
Q
gs
operating temperature)
40
nC
GateDrain ("Miller") Charge
Q
gd
14
nC
Note 1. Pulse Test: Pulse Width
300
s, Duty Cycle
2%.
SourceDrain Diode Ratings and Characteristics:
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Continuous Source Current (Body Diode)
I
S
4.5
A
Pulse Source Current (Body Diode)
I
SM
Note 2
18
A
Diode Forward Voltage
V
SD
T
C
= +25
C, I
S
= 4.5A, V
GS
= 0V
1.6
V
Reverse Recovery Time
t
rr
T
J
= +25
C, I
F
= 5.5A, dI
F
/dt = 100A/
s
310
660
ns
Note 1. Pulse Test: Pulse Width
300
s, Duty Cycle
2%.
Note 2. Repetitive rating: Pulse width limited by max, junction temperature.
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