ChipFind - документация

Электронный компонент: NTE68

Скачать:  PDF   ZIP
NTE2332
Darlington Silicon NPN Transistor
w
/ Internal Damper & Zener Diode
Description:
The NTE2332 Darlington transistor is especially well suited for use in switching of L load motor driv-
ers, printer hammer drivers, relay drivers, etc.
Features:
D
High DC Current Gain
D
Large Current Capacity and Wide ASO
D
Contains 60
10V Avalanche Diode Between Collector and Base
D
Uniformity in CollectortoBase Breakdown Voltage Due to Adoption of Accurate Impurity
Diffusion Process
D
25mJ Reverse Energy Rating
Absolute Maximum Ratings: (T
A
= +25
C, unless otherwise specified)
Collector to Base Voltage, V
CBO
,
60
10V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector to Emitter Voltage, V
CEO
,
60
10V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter to Base Voltage, V
EBO
6V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
2A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Collector Current, i
cp
4A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
B
0.4A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Dissipation (T
C
= +25
C), P
C
20W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Junction Temperature, T
J
+150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
A
= +25
C, unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
I
CEO
V
CB
= 40V, I
E
= 0
10
A
Emitter Cutoff Current
I
EBO
V
EB
= 5V, I
C
= 0
2
mA
Electrical Characteristics (Cont'd): (T
A
= +25
C, unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
DC Current Gain
h
FE
V
CE
= 5V, I
C
= 1A
1000 4000
Gain Bandwidth Product
f
T
V
CE
= 5V, I
C
= 1A
180
MH
Z
CollectorEmitter Saturation
Voltage
V
CE(sat)
I
C
= 1A, I
B
= 4mA
1.0
1.5
V
BaseEmitter Saturation
Voltage
V
BE(sat)
I
C
= 1A, I
B
= 4mA
2.0
V
CollectorBase Breakdown
Voltage
V
(BR)CBO
I
C
= 0.1mA, I
E
= 0
50
60
70
V
CollectorEmitter Breakdown
Voltage
V
(BR)CEO
I
C
= 1mA, R
BE
=
50
60
70
V
Unclamped Inductive Load
Energy
E
s/b
L = 100mH, R
BE
= 100
25
mJ
TurnOn Time
t
on
V
CC
= 20V, I
C
= 1A
0.2
s
Storage Time
t
stg
I
B1
= I
B2
= 4mA
3.5
s
Fall Time
t
f
I
B1
= I
B2
= 4mA
0.5
s
B
C
E
.250
(6.35)
Max
.500
(12.7)
Max
.500
(12.7)
Min
.110 (2.79)
.420 (10.67)
Max
.070 (1.78) Max
Base
.100 (2.54)
Collector/Tab
Emitter
.147 (3.75)
Dia Max