NTE388 (NPN) & NTE68 (PNP)
Silicon Complementary Transistors
General Purpose High Power Audio,
Disk Head Positioner for Linear Applications
Description:
The NTE388 (NPN) and NTE68 (PNP) are complementary silicon power transistors in a TO3 type
package designed for high power audio, disk head positioners, and other linear applications.
Features:
D
High Safe Operating Area: 2A @ 80V
D
High DC Current Gain: h
FE
= 15 Min @ I
C
= 8A
Absolute Maximum Ratings:
CollectorEmitter Voltage, V
CEO
250V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorEmitter Voltage, V
CEX
400V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorBase Voltage, V
CBO
400V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EBO
5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
16A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (Note 2)
30A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Base Current, I
B
5A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
C
= +25
C), P
D
250W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
C
1.43W/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
65
to +200
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
65
to +200
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoCase, R
thJC
0.70
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Matched complementary pairs are available upon request (NTE68MCP). Matched comple-
mentary pairs have their gain specification (h
FE
) matched to within 10% of each other.
Note 2. Pulse Test: Pulse Width = 5ms, Duty Cycle
10%.
Electrical Characteristics: (T
C
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
CollectorEmitter Sustaining Voltage
V
CEO(sus)
I
C
= 100mA, I
B
= 0, Note 3
250
V
Collector Cutoff Current
I
CEX
V
CE
= 250V, V
BE(off)
= 1.5V
250
A
I
CEO
V
CE
= 200V, I
B
= 0
500
A
Emitter Cutoff Current
I
EBO
V
EB
= 5V, I
C
= 0
500
A
Second Breakdown
Second Breakdown Collector Current
I
S/b
V
CE
= 50V, t = 0.5s (nonrepetitive)
5
A
with Base Forward Bias
V
CE
= 80V, t = 0.5s (nonrepetitive)
2
A
ON Characteristics
DC Current Gain
h
FE
V
CE
= 4V, I
C
= 8A
15
60
V
CE
= 4V, I
C
= 16A
5
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 8A, I
B
= 800mA
1.4
V
I
C
= 16A, I
B
= 3.2A
4.0
V
BaseEmitter On Voltage
V
BE(on)
V
CE
= 4V, I
C
= 8A
2.2
V
Dynamic Characteristics
Current GainBandwidth Product
f
T
V
CE
= 10V, I
C
= 1A, f
test
= 1MHz
4
MHz
Output Capacitance
C
ob
V
CB
= 10V, I
E
= 0, f
test
= 1MHz
500
pF
Note 3. Pulse Test: Pulse Width = 300
s, Duty Cycle
2%.
1.187
(30.16)
.875 (22.2)
Dia Max
.665
(16.9)
.430
(10.92)
Seating
Plane
.040 (1.02)
.312 (7.93) Min
.135 (3.45) Max
.350 (8.89)
Emitter
Collector/Case
Base
.215 (5.45)
.525 (13.35) R Max
.156 (3.96) Dia
(2 Holes)
.188 (4.8) R Max
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