NTE69
Silicon NPN Transistor
UHF/VHF Amplifier
Absolute Maximum Ratings:
CollectorEmitter Voltage, V
CEO
25V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorBase Voltage, V
CBO
35V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EBO
3V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Collector Current, I
C
50mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
A
= +25
C), P
D
350mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate above 25
C
2.8mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
C
= +25
C), P
D
1.0W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate above 25
C
8.0mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Tange, T
J
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoCase, R
thJC
125
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoAmbient (Note 1), R
thJA
357
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1 R
thJA
is measured with the device soldered into a typical printed circuit board.
Electrical Characteristics: (T
A
= +25
C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
CollectorEmitter Breakdown Voltage
V
(BR)CEO
I
C
= 1mA, I
B
= 0, Note 2
25
V
ColletorBase Breakdown Voltage
V
(BR)CBO
I
C
= 100
A, I
E
= 0
35
V
EmitterBase Breakdown Voltage
V
(BR)EBO
I
E
= 100
A, I
C
= 0
3
V
ON Characteristics
DC Current Gain
h
FE
V
CE
= 4V, I
C
= 4mA
25
60
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 10mA, I
B
= 1mA
200
350
mV
BaseEmitter Saturation Voltage
V
BE(sat)
I
C
= 10mA, I
B
= 1mA
750
950
mV
SmallSignal Characteristics
Current GainBandwidth Product
f
T
V
CE
= 12V, I
C
= 4mA, f = 100MHz
750
1100
MHz
Output Capaciatnce
C
obo
V
CB
= 10V, I
E
= 0, f = 1MHz
0.8
1.0
pF
CollectorBase Time Constant
rbC
c
V
CE
= 12V, I
E
= 4mA, f = 31.8MHz
9.5
ps
Note 2 Pulse test: Pulse Width
300
s, Duty Cycle
2.0%
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