NTE2411
Silicon PNP Transistor
High Voltage Amp/Driver
(Compl to NTE2410)
Description:
The NTE2411 is a silicon PNP transistor in an SOT23 type surface mount case designed for use in
high voltage applications.
Absolute Maximum Ratings:
CollectorEmitter Voltage, V
CEO
150V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorBase Voltage, V
CBO
160V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EBO
5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Collector Current, I
C
500mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
A
= +25
C, FR5 Board, Note 1), P
D
225mW
. . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
C
1.8mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoAmbient, R
thJA
556
C/mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
A
= +25
C, Alumina Substrate, Note 2), P
D
300mW
. . . . . . . . . . . . . . . . .
Derate Above 25
C
2.4mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoAmbient, R
thJA
417
C/mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. FR5 = 1.0 x 0.75 x 0.62 in.
Note 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
CollectorEmitter Breakdown Voltage
V
(BR)CEO
I
C
= 1mA, I
B
= 0
150
V
CollectorBase Breakdown Voltage
V
(BR)CBO
I
C
= 100
A, I
E
= 0
160
V
EmitterBase Breakdown Voltage
V
(BR)EBO
I
E
= 10
A, I
C
= 0
5
V
Collector Cutoff Current
I
CBO
V
CB
= 100V, I
E
= 0
50
nA
V
CB
= 100V, I
E
= 0, T
A
= +100
C
50
A
Electrical Characteristics (Cont'd): (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
ON Characteristics
DC Current Gain
h
FE
I
C
= 1mA, V
CE
= 5V
50
I
C
= 10mA, V
CE
= 5V
60
240
I
C
= 50mA, V
CE
= 5V
50
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 10mA, I
B
= 1mA
1.0
V
I
C
= 50mA, I
B
= 5mA
1.0
V
BaseEmitter Saturation Voltage
V
BE(sat)
I
C
= 10mA, I
B
= 1mA
1.0
V
I
C
= 50mA, I
B
= 5mA
1.0
V
SmallSignal Characteristics
Current GainBandwidth Product
f
T
I
C
= 10mA, V
CE
= 10V, f = 100MHz
100
300
MHz
Output Capacitance
C
obo
V
CB
= 10V, I
E
= 0, f = 1MHz
6
pF
Small Signal Current gain
h
fe
I
C
= 1mA, V
CE
= 10V, f = 1kHz
40
200
Noise Figure
NF
I
C
= 200
A, V
CE
= 5V, R
S
= 10
,
f = 10Hz to 15.7kHz
8
dB
.098
(2.5)
Max
.074 (1.9)
.118 (3.0) Max
.051
(1.3)
.043 (1.1)
.007 (0.2)
.016 (0.48)
.037 (0.95)
B
C
E
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