NTE2930
MOSFET
NChannel, Enhancement Mode
High Speed Switch
Features:
D
Avalanche Rugged Technology
D
Rugged Gate Oxide Technology
D
Lower Input Capacitance
D
Improved Gate Charge
D
Extended Safe Operating Area
D
Lower R
DS
(on): 0.032
Typ
D
Lower Leakage Current: 10
A (Max) @ V
DS
= 100V
Absolute Maximum Ratings:
DraintoSource Voltage, V
DSS
100V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Drain Current, I
D
Continuous
T
C
= +25
C
31A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
C
= +100
C
21.9A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulsed (Note 1)
170A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
C
= +25
C), P
D
100W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
C
0.67W/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GateSource Voltage, V
GS
20V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulsed Avalanche Energy (Note 2), E
AS
641mJ
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Avalanche Current (Note 1), I
AR
31A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Repetitive Avalanche Energy (Note 1), E
AR
10mJ
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Diode Recovery dv/dt (Note 3), dv/dt
6.5V/ns
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
55
to +175
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +175
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Lead Temperature (During Soldering, 1/8" from case, 5sec), T
L
+300
C
. . . . . . . . . . . . . .
Thermal Resistance, JunctiontoCase, R
thJC
1.5
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, JunctiontoAmbient, R
thJA
40
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 2. L = 1mH, I
AS
= 31A, V
DD
= 25V, R
G
= 27
, Starting T
J
= +25
C.
Note 3. I
SD
40A, di/dt
470A/
s, V
DD
V
(BR)DSS
, Starting T
J
= +25
C.
Electrical Characteristics: (T
C
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
DrainSource Breakdown Voltage
BV
DSS
V
GS
= 0V, I
D
= 250
A
100
V
Breakdown Voltage Temperature
Coefficient
V
(BR)DSS
/
T
J
I
D
= 250
A
0.11
V/
C
Gate Threshold Voltage
V
GS(th)
V
DS
= 5V, I
D
= 250
A
2.0
4.0
V
GateSource Leakage Forward
I
GSS
V
GS
= 10V
100
nA
GateSource Leakage Reverse
I
GSS
V
GS
= 10V
100
nA
DraintoSource Leakage Current
I
DSS
V
DS
= 100V
10
A
V
DS
= 80V, T
C
= +150
C
100
A
Static DrainSource ON Resistance
R
DS(on)
V
GS
= 10V, I
D
= 15.5A, Note 4
0.04
Forward Transconductance
g
fs
V
DS
= 40V, I
D
= 15.5A, Note 4
27.3
mhos
Input Capacitance
C
iss
V
GS
= 0V, V
DS
= 25V, f = 1MHz
1750
2270
pF
Output Capacitance
C
oss
420
485
pF
Reverse Transfer Capacitance
C
rss
185
215
pF
TurnOn Delay Time
t
d(on)
V
DD
= 50V
,
I
D
= 40A, R
G
= 6.2
,
17
50
ns
Rise Time
t
r
Note 4, Note 5
20
50
ns
TurnOff Delay Time
t
d(off)
80
160
ns
Fall Time
t
f
45
100
ns
Total Gate Charge
Q
g
V
GS
= 10V, I
D
= 40A, V
DS
= 80V,
75
97
nC
GateSource Charge
Q
gs
Note 4, Note 5
13.2
nC
GateDrain ("Miller") Charge
Q
gd
34.8
nC
SourceDrain Diode Ratings and Characteristics
Continuous Source Current
I
S
(Body Diode)
31
A
Pulse Source Current
I
SM
(Body Diode) Note 1
170
A
Diode Forward Voltage
V
SD
T
J
= +25
C, I
S
= 31A, V
GS
= 0V, Note 4
1.6
V
Reverse Recovery Time
t
rr
T
J
= +25
C, I
F
= 40A, di
F
/dt = 100A/
s,
135
ns
Reverse Recovery Charge
Q
rr
Note 4
0.65
C
Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 4. Pulse Test: Pulse Width = 250
s, Duty Cycle
2%.
Note 5. Essentially independent of operating temperature.
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