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Электронный компонент: NTE7128

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NTE2323
Silicon NPN Transistor
Quad, Amplifier
Absolute Maximum Ratings:
CollectorEmitter Voltage, V
CEO
200V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorBase Voltage, V
CBO
200V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EBO
5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Collector Current, I
C
500mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
A
= +25
C, Each Die), P
D
0.75W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
C
5.98mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
A
= +25
C, Four Die Equal Power), P
D
1.7W
. . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
C
13.6mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Reistance, JunctiontoAmbient, R
thJA
Each Die
167
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Effective, 4 Die
73.5
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Reistance, JunctiontoCase, R
thJC
Each Die
100
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Effective, 4 Die
39
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Coupling Factors, JunctiontoAmbient
Q1Q4 or Q2Q3
56%
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Q1Q2 or Q3Q4
10%
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Coupling Factors, JunctiontoCase
Q1Q4 or Q2Q3
46%
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Q1Q2 or Q3Q4
5%
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
CollectorEmitter Breakdown Voltage
V
(BR)CEO
I
C
= 1mA, I
B
= 0
200
V
CollectorBase Breakdown Voltage
V
(BR)CBO
I
C
= 100
A, I
E
= 0
20
V
EmitterBase Breakdown Voltage
V
(BR)EBO
I
E
= 100
A, I
C
= 0
5
V
Collector Cutoff Current
I
CBO
V
CB
= 150V, I
E
= 0
100
nA
Electrical Characteristics (Cont'd): (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
ON Characteristics
DC Current Gain
h
FE
V
CE
= 10V, I
C
= 1mA
25
45
V
CE
= 10V, I
C
= 10mA
40
60
V
CE
= 10V, I
C
= 30mA
40
80
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 20mA, I
B
= 2mA
0.3
0.5
V
BaseEmitter Saturation Voltage
V
BE(sat)
I
C
= 20mA, I
B
= 2mA
0.7
0.9
V
Current GainBandwidth Product
f
T
V
CE
= 20V, I
C
= 10mA, f = 100MHz
50
80
MHz
Output Capacitance
C
obo
V
CB
= 20V, I
E
= 0, f = 1MHz
2.5
5.0
pF
Input Capacitance
C
ibo
V
EB
= 3V, I
C
= 0, f = 1MHz
40
50
pF
Pin Connection Diagram
Emitter
Collector
N.C.
Collector
1
2
3
4
Collector
Base
Emitter
5
Emitter
6
Base
7
14
13
12
11
Base
N.C.
10
9
Base
8
Collector
Emitter
.600 (15.24)
1
7
14
8
.300 (7.62)
.200 (5.08)
Max
.100 (2.45)
.099 (2.5) Min
.785 (19.95) Max