NTE7141
Integrated Circuit
Dual BIMOS Operational Amplifier
w
/MOSFET Input, Bipolar Output
Description:
The NTE7141 is a dual, operational amplifier in an 8Lead MiniDIP type package that combines the
advantages of MOS and bipolar transistors on the same monolithic chip. The gateprotected MOS-
FET (PMOS) input transistors provide high input impredance and a wide commonmode input volt-
age range (typically to 0.5V below the negative supply rail). The bipolar output transistors allow a wide
output voltage swing and provide a high output current capability.
Features:
D
Internally Compensated
D
MOSFET Input Stage:
Very High Input Impedance
Very Low Input Current
Wide CommonMode Input Voltage Range
Rugged Input Stage Bipolar Diode Protected
D
Directly Replaces Industry Type 1458 in Most Applications
D
Operation From 4Vto36V Single or Dual Supplies
D
Characterized for
15V Operation for TTL Supply Systems with Operation down to 4V
D
Wide Bandwidth
D
High VoltageFollower Slew Rate
D
Output Swings to Within 0.5V of Negative Supply at V+ = 5V, V = 0
Applications:
D
GroundReferenced SingleSupply Amplifiers in Automobile and Portable Instrumentation
D
Sample and Hold Amplifiers
D
LongDuration Timers/Multivibrators (Microseconds Minutes Hours)
D
Photocurrent Instrumentation
D
Active Filters
D
Intrusion Alarm Systems
D
Comparators
D
Instrumentation Amplifiers
D
Function Generators
D
Power Supplies
Absolute Maximum Ratings:
DC Supply Voltage (Between V+ and V Terminals)
36V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Voltage Range
4 to 36V or
2 to
18V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DifferentialMode Input Voltage
8V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CommonMode DC Input Voltage
(V+ +8V) to (V 0.5V)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
InputTerminal Current
1mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Device Dissipation, P
D
630mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Linearly Above +55
C
6.67mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Temperature Range, T
opr
40
to +85
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
65
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (During Soldering, 1/16" from case, 10sec max), T
L
+265
C
. . . . . . . . . . . . . . . . .
Output ShortCircuit Duration (Note 1)
Unlimited
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Short circuit may be applied to GND or to either supply. Temperature and/or supply voltages
must be limited to keep dissipation within maximum rating.
Electrical Characteristics: (V+ = +15V, V = 15V unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Input Offset Voltage
|V
IO
|
T
A
= +25
C
5
15
mV
T
A
= 40
to +85
C
10
mV
Input Offset Current
|I
IO
|
T
A
= +25
C
0.5
30
pA
T
A
= +85
C
32
pA
Input Current
I
I
T
A
= +25
C
10
50
pA
T
A
= +85
C
640
pA
LargeSignal Voltage Gain
A
OL
Note 2
T
A
= +25
C
20k
100k
V/V
86
100
dB
T
A
= 40
to +85
C
63k
V/V
96
dB
CommonMode Rejection Ratio
CMRR
T
A
= +25
C
32
320
V/V
70
90
dB
T
A
= 40
to +85
C
32
V/V
90
dB
CommonMode InputVoltage
Range
V
ICR
T
A
= +25
C
15
15.5
to
+12.5
+11
V
T
A
= 40
to +85
C
15
to
+12.3
V
Power Supply Rejection Ratio
V
IO
/
V T
A
= +25
C
100
150
V/V
PSSR
76
80
dB
V
IO
/
V T
A
= 40
to +85
C
150
V/V
PSSR
76
dB
Note 2. V
O
= 26V
PP
, +12V, 14V and R
L
= 2k
.
Electrical Characteristics (Cont'd): (V+ = +15V, V = 15V unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Maximum Output Voltage
V
OM
+
T
A
= +25
C, R
L
= 2k
+12
+13
V
V
OM
14
14.4
V
T
A
= +25
C, Note 3
0.4
0.13
V
V
OM
+
T
A
= 40
to +85
C, R
L
= 2k
+12.4
V
V
OM
14.2
V
Supply Current, For Both Amps
I+
T
A
= +25
C
8
12
mA
T
A
= 40
to +85
C
8.4
mA
Total Device Dissipation
P
D
T
A
= +25
C
240
360
mW
T
A
= 40
to +85
C
252
mW
Temperature Coefficient of
Input Offset Voltage
V
IO
/
T
T
A
= 40
to +85
C
15
A/
C
Input Resistance
R
I
T
A
= +25
C
1.5
T
Input Capacitance
C
I
T
A
= +25
C
4
pF
Output Resistance
R
O
T
A
= +25
C
60
Equivalent Wideband Input Noise
e
n
T
A
= +25
C,
f = 1kHz
40
nV/
Hz
Voltage
R
S
= 100
f = 10kHz
12
nV/
Hz
ShortCircuit Current to Opposite
Supply
Source
I
OM
+
T
A
= +25
C
40
mA
Sink
I
OM
11
mA
GainBandwidth Product
f
T
T
A
= +25
C
4.5
MHz
Slew Rate
SR
T
A
= +25
C
9
V/
s
Transient Response:
Rise Time
t
r
T
A
= +25
C, R
L
= 2k
, C
L
= 100pF
0.08
s
Overshoot
10
%
Setting Time at 10V
PP
1mV
t
s
T
A
= +25
C, R
L
= 2k
, C
L
= 100pF,
4.5
s
10mV
Voltage Follower
1.4
s
Crosstalk
CT
T
A
= +25
C, f = 1kHz
120
dB
Note 3. V+ = 5V, V = GND, I
Sink
= 200
A.
Electrical Characteristics: (T
A
= +25
C, V+ = +5V, V = 5V unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Input Offset Voltage
|V
IO
|
5
mV
Input Offset Current
|I
IO
|
0.1
pA
Input Current
I
I
2
pA
Input Resistance
R
I
1
T
LargeSignal Voltage Gain
A
OL
100k
V/V
100
dB
CommonMode Rejection Ratio
CMRR
32
320
V/V
70
90
dB
Electrical Characteristics (Cont'd): (T
A
= +25
C, V+ = +5V, V = 5V unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
CommonMode InputVoltage Range
V
ICR
0.5
V
+2.6
V
Power Supply Rejection Ratio
V
IO
/
V
31.6
V/V
PSSR
90
dB
Maximum Output Voltage
V
OM
+
3.0
V
V
OM
0.3
V
Maximum Output Current:
Source
I
OM
+
20
mA
Sink
I
OM
1
mA
Slew Rate
SR
7
V/
s
GainBandwidth Product
f
T
4.5
MHz
Supply Current
I+
4
mA
Device Dissipation
P
D
20
mW
Pin Connection Diagram
1
4
.260 (6.6)
.390 (9.9)
Max
8
5
.155
(3.93)
.145 (3.68)
.300
(7.62)
.300 (7.62)
.100 (2.54)
V+
1
2
3
4
Output A
Invert Input A
NonInvert Input A
V
8
7
6
5
Output B
Invert Input B
NonInvert Input B
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