NTE744
Integrated Circuit
RF/IF Amp
Description:
The NTE744 is a monolithic silicon integrated circuit that provides an rf amplifier, if amplifier, mixer,
oscillator, AGC detector, and voltage regulator on a single chip. It is intended for use in superhetero-
dyne AM radio receiver applications particularly in automobiles. The NTE744 is supplied in a 14lead
dualinline plastic package and operates over the temperature range of 55
to 125
C.
Features:
D
Lownoise, lowR
b
, rf stage in cascode connectioneliminates MillerEffect regeneration and
allows controlled power rise by the choice of external components.
D
Mixeroscillator stage with internal feedbackeliminates need for tapped or multiwinding os-
cillator coils
D
Cascode if amplifier with controlled output impedance and negligible Miller Effecteliminates
regeneration and selectivity skewing
D
Frequencycounter AGC circuitallows control of AGC response by selection of the coupling
capacitor.
D
Integral regulation with builtin surge protection
D
Separately accessible amplifiers
Absolute Maximum Ratings:
DC Supply Voltage (Pin3), V+
9V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DC Supply Voltage (IF Output, Pin6)
40V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DC Supply Voltage (RF Output, Pin13)
20V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DC Supply Voltage (Mixer Output, Pin14)
20V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DC Current (Pin3)
35mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation (Up to T
A
= +55
C), P
D
750mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above T
A
= 55
C
6.67mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Ambient Temperature Range, T
opr
55
to +125
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperatur Range, T
stg
65
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (During Soldering, 1/16" (1.59mm)from case, 10sec max), T
L
+265
C
. . . . . . . .
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static Characteristics
DC Voltage
At Pin1, Pin4
V
1
, V
4
4.7
V
At Pin2, Pin3, Pin14
V
2
, V
3
, V
14
6.8
V
At Pin5
V
5
0.25
V
At Pin6
V
6
12
V
At Pin7
V
7
0.76
V
At Pin8, Pin9
V
8
, V
9
0
V
At Pin10, Pin11
V
10
, V
11
0.71
V
At Pin12
V
12
0.71
V
At Pin13
V
13
4.0
V
DC Current
Into Pin1, Pin4, Pin5, Pin7,
Pin8, Pin9, Pin10, Pin11, Pin12
I
1
, I
4
, I
5
, I
7
,
I
8
, I
9
, I
10
, I
12
0
mA
Into Pin2
I
2
1.2
mA
Into Pin3
I
3
15
mA
Into Pin6
I
6
4.3
mA
Into Pin13
I
13
4.5
mA
Into Pin14
I
14
0.17
mA
Performance Characteristics
Sensitivity
Input Signal to Dummy Antenna at
f
IN
= 1MHz, 30% AM Modulation at
f
MOD
= 400Hz, for 11mV Output at V
O
2.3
V
SignaltoNoise Ratio
S/N
Ratio of Output at V
O
with Modulation
ON & the OFF, Input Signal = 100
V,
30% AM Modulation at f
MOD
= 400Hz
34
43
dB
Overload Distortion
Input Signal set at 1MHz, 90% AM
Modulation, Distortion at V
O
must be
10%
160k 400k
V
V
CC
Substrate & IF Amp GND
RF Output
1
2
3
4
Mixer Input
OSC Tank
Mixer Bypass
5
AGC Drive
6
IF Output
7
IF Input
14
13
12
11
Mixer Output
RF Input
RF Bypass
10
AGC Capacitor
9
RF GND
8
Pin Connection Diagram
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