NTE492
MOSFET
NCh, Enhancement Mode
High Speed Switch
Absolute Maximum Ratings:
DrainSource Voltage, V
DS
200V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GateSource Voltage, V
GS
20V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Drain Current, I
D
Continuous (Note 1)
250mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulsed (Note 2)
500mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
A
= +25
C), P
D
350mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate above 25
C
2.8mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. The Power Dissipation of the package may result in a lower continuous drain current.
Note 2. Pulse Width
300
s, Duty Cycle
2%.
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max
Unit
OFF Characteristics
ZeroGateVoltage Drain Current
I
DSS
V
DS
= 130V, V
GS
= 0
30
nA
DrainSource Breakdown Voltage
V
(BR)DSX
V
GS
= 0, I
D
= 100
A
200
V
Gate Reverse Current
I
GSS
V
GS
= 15V, V
DS
= 0
0.01 10.0
nA
ON Characteristics (Note 2)
Gate Threshold Voltage
V
GS(Th)
I
D
= 1mA, V
DS
= V
GS
1.0
3.0
V
Static DrainSource ON Resist-
ance
r
DS(on)
V
GS
= 10V, I
D
= 100mA
4.5
6.0
V
GS
= 10V, I
D
= 250mA
4.8
6.4
SmallSignal Characteristics
Input Capacitance
C
iss
V
DS
= 25V, V
GS
= 0, f = 1MHz
60
pF
Reverse Transfer Capacitance
C
rss
V
DS
= 25V, V
GS
= 0, f = 1MHz
6.0
pF
Output Capacitance
C
oss
V
DS
= 25V, V
GS
= 0, f = 1MHz
30
pF
Forward Transconductance
g
fs
V
DS
= 25V, I
D
= 250mA
200
400
mmhos
Note 2. Pulse Width
300
s, Duty Cycle
2%.
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