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Электронный компонент: NTE832SM

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NTE832 & NTE832SM
Integrated Circuit
Tone Decoder
Description:
The NTE832 and NTE832SM are general purpose tone decoders designed to provide a saturated
transistor switch to GND when an input signal is present within the passband. The circuit consists
of an I and Q detector driven by a voltage controlled oscillator which determines the center frequency
of the decoder. External components are used to independently set center frequency, bandwidth, and
output delay.
Features:
D
Logic Compatible Output with 100mA Current Sinking Capability
D
Bandwidth Adjustment from 0 to 14%
D
Inherent Immunity to False Signals
D
High Stable Center Frequency
D
High Rejection of OutOfBand Signals and Noise
D
Center Frequency Adjustable from 0.01Hz to 500kHz
D
Frequecny Range Adjustable over 20:1 range by an External Resistor
D
Available in Standard 8Lead DIP (NTE832) and Surface Mount SOIC8 (NTE832SM)
Applications:
D
Touch Tone Decoder
D
Precision Oscillator
D
Frequency Monitoring and Control
D
Wide Band FSK Demodulation
D
Communications Paging Decoders
D
Carrier Current Remote Controls
D
Ultrasonic Controls (Remote TV, etc.)
Absolute Maximum Ratings:
Operating Voltage, V
CC
10V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input Voltage, V
IN
10V to V
CC
+0.5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output Voltage, V
O
15V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation (Note 1), P
D
300mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Temperature Range, T
opr
0
to +70
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
65
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. The maximum junction temperature of these devices is +100
C. For operating at elevated
temperatures, devices must be derated on a thermal resistance of +187
C/W, junctiontoambi-
ent.
Electrical Characteristics: (V
CC
= 5V, T
A
= +25
C, unless otherwise specified)
Parameter
Test Conditions
Min
Typ
Max
Unit
Power Supply Voltage
4.75
5.00
9.00
V
Power Supply Current, Quiescent
R
L
= 20k
7
10
mA
Power Supply Current, Activated
12
15
mA
Quiescent Power Dissipation
35
mW
Input Resistance
15
20
25
k
Smallest Detectable Input Voltage
I
L
= 100mA, f
i
= f
o
20
25
mV
rms
Largest No Output Input Voltage
I
C
= 100mA, f
i
= f
o
10
15
mV
rms
Largest Simultaneous Outband Signal to Inband
Signal Ratio
R
L
= 20k
+6
dB
Minimum Input Signal to Widband Noise Ratio
B
n
= 140kHz
6
dB
Largest Detection Bandwidth
10
14
18
% of f
o
Largest Detection Bandwidth Skew
2
3
% of f
o
Largest Detection Bandwidth with Variation with
Temperature
0.1
0.5
%/
C
Largest Detection bandwidth with Variation with
Supply Voltage
4.75V to 6.75V
1
5
%/V
Highest Center Frequency
R
L
= 20k
100
500
kHz
Center Frequency Stability
0
< T
A
, +70
C
35
60
ppm/
C
55
< T
A
< +125
C
35
140
ppm/
C
Center Frequency Shift with Supply Voltage
4.75V to 6.75V
0.4
2.0
%/V
Fastest ONOFF Cycling Rate
f
o
/20
Output Leakage Current
V
8
= 15V
0.01
25.0
A
Output Saturation Voltage
e
i
= 25mV, I
8
= 30mA
0.2
0.4
V
e
i
= 25mV, I
8
= 100mA
0.6
1.0
V
Output Fall Time
30
ns
Output Rise Time
150
ns
Pin Connection Diagram
V
CC
Timing Capacitor
Loop Filter
1
2
3
4
Output Filter
Input
8
7
6
5
Output
GND
Timing Resistor
NTE832 (8Lead DIP)
NTE832SM (SOIC8)
1
4
.260 (6.6)
.390 (9.9)
Max
8
5
.155
(3.93)
.145 (3.68)
.300
(7.62)
.300 (7.62)
.100 (2.54)
.198 (5.03)
.236
(5.99)
NOTE: Pin1 on Beveled Edge
.154
(3.91)
061
(1.53)
.006 (.152)
1
4
8
5
.192 (4.9)
.050 (1.27)
016
(.406)