NTE887M
Integrated Circuit
Low Power, JFET OP Amplifier
Description:
The NTE887M is a JFETinput operational amplifier in an 8Lead DIP type package designed as a
lowpower version of the NTE857M amplifier. This device features high input impedance, wide band-
width, high slew rate, and low input offset and bias current.
Features:
D
Very Low Power Consumption
D
Typical Supply Current: 200
A
D
Wide CommonMode and Differential Voltage Ranges
D
Low Input Bias and Offset Currents
D
CommonMode Input Voltage Range Includes V
CC
+
D
Output ShortCircuit Protection
D
High Input Impedance: JFETInput Stage
D
Internal Frequency Compensation
D
LatchUpFree Operation
D
High Slew rate: 3.5V/
s Typ
Absolute Maximum Ratings: (T
A
= 0
to +70
C unless otherwise specified)
Supply Voltage (Note 1), V
CC
+
+18V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Supply Voltage (Note 1), V
CC
18V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Differential Input Voltage (Note 2), V
ID
30V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input Voltage (Note 1, Note 3), V
I
15V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Duration of Output Short Circuit (Note 4), t
s
Unlimited
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Total Dissipation, P
D
T
A
+25
C
680mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above +65
C
8mW/
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
A
= +70
C
640mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Ambient Temperature Range, T
A
0
to +70
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature range, T
stg
65
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (During Soldering, 1/16" (1.6mm) from case for 10sec), T
L
+260
C
. . . . . . . . . . .
Note 1. All voltage values, except differential voltages, are with respect to the midpoint between
V
CC
+ and V
CC
.
Note 2. Differential voltages are at the noninverting input pin with respect to the inverting input pin.
Note 3. The magnitude of the input voltage must never exceed the magnitude of the supply voltage
or 15V, whchever is less.
Note 4. The output may be shorted to GND or to either supply. Temperature and/or supply voltages
must be limited to ensure that the dissipation rating is not exceeded.
Electrical Characteristics: (V
CC
=
15V, Note 5 unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Input Offset Voltage
V
IO
V
O
= 0,
T
A
= +25
C
3
15
mV
R
S
= 50
T
A
= 0
to +70
C
20
mV
Temperature Coefficient of
Input Offset Voltage
a
VIO
V
O
= 0, R
S
= 50
, T
A
= 0
to +70
C
10
V/
C
Input Offset Current
I
IO
V
O
= 0, Note 6
T
A
= +25
C
5
200
pA
T
A
= 0
to +70
C
5
nA
Input Bias Current
I
IB
V
O
= 0, Note 6
T
A
= +25
C
30
400
pA
T
A
= 0
to +70
C
10
nA
CommonMode Input Voltage Range
V
ICR
T
A
= +25
C
11
12
+15
V
Maximim Peak Output Voltage Swing
V
OM
R
L
= 10k
, T
A
= +25
C
10.0
13.5
V
R
L
10k
, T
A
= 0
to +70
C
10.0
V
LargeSignal Differential Voltage
A
VD
V
O
=
10V,
T
A
= +25
C
3
6
V/mV
Amplification
R
L
10k
T
A
= 0
to +70
C
3
V/mV
UnityGain Bandwidth
B
1
R
L
= 10k
, T
A
= +25
C
1
MHz
Input Resistance
r
i
T
A
= +25
C
10
12
CommonMode Rejection Ratio
CMRR
V
IC
= V
ICR
min, V
O
= 0, R
S
= 50
,
T
A
= +25
C
70
86
dB
Supply Volatge Rejection Ratio
(
V
CC
/
V
IO
)
k
SVR
V
CC
=
15V to
9V, V
O
= 0,
R
S
= 50
, T
A
= +25
C
70
95
dB
Total Power Dissipation
P
D
No Load, V
O
= 0, T
A
= +25
C
6.0
7.5
mW
Supply Current
I
CC
No Load, V
O
= 0, T
A
= +25
C
200
250
A
Crosstalk Attenuation
V
o1
/V
o2
A
VD
= 100, T
A
= +25
C
120
dB
Note 5. All characteristics are measured under openloop conditions with zero commonmode volt-
age unless otherwise specified.
Note 6. Input bias currents of a FETinput operational amplifier are normal junction reverse currents,
which are temperature sensitive. Pulse techniques must be used that will maintain the junc-
tion temperature as close to the ambient temperature as possible.
Operating Characteristics: (V
CC
=
15V, T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Slew Rate at Unity Gain
SR
V
I
= 10V, R
L
= 10k
, C
L
= 100pF
1.5
3.5
V/
s
Rise Time
t
r
V
I
= 20mV, R
L
= 10k
, C
L
= 100pF
0.2
s
Overshoot Factor
10%
Equivalent Input Noise Voltage
V
n
R
S
= 100
, f = 1kHz
42
nV/
Hz
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